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VBsemi IRF7811AVTR-VB IRF7811AVTR
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- VBsemi IRF7811AVTR-VB
- Type
- VBSEMI
- Minimum package
- 4000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- VBSEMI
- Electronic Component
- IRF7811AVTR-VB
- Electronic Component
- 1
- Package
- SOP-8
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.211g
- Electronic Component
- 1
- Electronic Component
- BM0260118996
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 2.2W
- Electronic Component
- Electronic Component
- Electronic Component
- 4000
- Voltage(Vdss)
- 30V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
IRF7811AVTR-VB 产品概述
一、主要参数
- 类型：N沟道功率场效应晶体管（MOSFET）
- 品牌：VBsemi（微碧半导体），封装：SOP-8
- 漏源电压 Vdss：30V（注：描述中有标注20V，详见“注意事项”）
- 连续漏极电流 Id：13A（描述中有 12A 标注）
- 导通电阻 RDS(on)：8mΩ @ Vgs=10V；11mΩ @ Vgs=4.5V
- 最大耗散功率 Pd：2.2W
- 阈值电压 Vgs(th)：约 1V
- 栅极电荷 Qg：6.1nC @ 10V
- 输入电容 Ciss：800pF @ 15V；反向传输电容 Crss：73pF；输出电容 Coss：165pF
- 工作温度范围：-55℃ 至 +150℃
二、主要特点
- 低导通电阻，尤其在10V栅压下（8mΩ），适合中高电流导通场合，导通损耗低；
- 较小的栅极电荷（6.1nC），便于驱动，适合开关频率中等的应用；
- 中等耐压（额定30V），适合12–30V供电系统中的开关与保护用途；
- SOP-8 封装利于小型化模块设计与批量表贴生产。
三、典型应用场景
- DC-DC 降压转换器（同步整流、低侧开关）；
- 电机驱动的半桥低侧开关（中小功率）；
- 负载开关、电源管理与保护电路；
- LED 驱动、汽车电子（需确认汽车规范和耐压等级）。
四、驱动与热管理建议
- 推荐栅极驱动电压10V以获得最低RDS(on)，若驱动仅4.5V工作，则导通电阻增至11mΩ，导通损耗相应上升。
- 在13A工作条件下，导通损耗约 I^2·R ≈ 1.35W（10V栅压）；在4.5V栅压下约1.86W，接近器件Pd 2.2W，需注意散热与结温控制。
- 栅极驱动能量：单次开关约 Qg·Vgs ≈ 6.1nC·10V = 6.1×10^-8 J，若以100kHz开关频率，栅极驱动损耗约 6.1 mW（仅供估算）。
- 建议在PCB上做好散热铜箔扩展、适当过孔或散热片连接，以保证长期可靠运行。
五、封装与可靠性
- SOP-8 作为表面贴装封装，便于自动化贴装与焊接，但其散热能力受限于封装本身与PCB铜面积，设计时需考虑热阻与热通道。
- 工作温度范围宽（-55℃~150℃），适合较严苛环境，但高温下需留足裕度，避免长期在Pd极限下运行。
六、选型与注意事项
- 用户资料中“描述：耐压20V、电流12A”与上述参数存在差异，可能为不同版本或信息标注不一致。建议以厂家正式数据手册与器件封装铭牌为准；如用于关键系统（汽车、医疗等），请向供应商确认批次与可靠性测试资料。
- 在高电流或高开关频率应用中，优先验证结温、短时脉冲能力及热循环耐受性，必要时选择更大Pd或带有散热增强的封装。
总体而言，IRF7811AVTR-VB 提供低 RDS(on) 与适中栅极电荷的平衡特性，适合12–30V电源域内要求低导通损耗与中等开关速度的开关应用。
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