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VBsemi HUF75321D3ST-VB HUF75321D3ST
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- VBsemi HUF75321D3ST-VB
- Type
- VBSEMI
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- VBSEMI
- Electronic Component
- HUF75321D3ST-VB
- Electronic Component
- 1
- Package
- TO-252
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.39g
- Electronic Component
- 1
- Electronic Component
- BM0230496792
- Operating Temperature
- 55℃~+175℃
- Power Dissipation(Pd)
- 100W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 60V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
HUF75321D3ST-VB 产品概述
一、产品简介
HUF75321D3ST-VB 是微碧半导体（VBsemi）推出的一款高性能 N 沟道功率场效应管，耐压 60V，适用于中功率开关与电源管理场合。器件采用 TO-252（DPAK）表面贴装封装，工作温度范围宽（-55℃ 至 +175℃），适应严苛环境与工业级应用需求。
二、主要参数
- 漏源耐压（Vdss）：60V
- 连续漏极电流（Id）：标称可达 45A（部分规范或应用文档中也有保守值 35A）
- 导通电阻（RDS(on)）：25mΩ @ Vgs=10V；30mΩ @ Vgs=4.5V
- 耗散功率（Pd）：100W（散热条件限制下）
- 阈值电压（Vgs(th)）：2V @ ID=250µA
- 总栅极电荷（Qg）：11nC @ Vgs=10V
- 输入电容（Ciss）：1.5nF；输出电容（Coss）：140pF；反向传输电容（Crss/Crss）：60pF
- 封装：TO-252（DPAK）
- 工作温度：-55℃ ~ +175℃
三、特性与优势
- 低导通阻抗：在 10V 驱动下 RDS(on) 仅 25mΩ，有利于降低导通损耗和提高效率。
- 中等栅极电荷：11nC 的 Qg 在驱动器设计上平衡了开关速度与驱动功耗，适合常见驱动电路或驱动芯片。
- 宽温度范围与高功率耗散：-55℃~+175℃ 的额定温度与 100W 的耗散能力，使其在工业、电源模块与电机驱动中表现可靠。
- 封装工艺成熟：TO-252 便于 SMT 组装与热量通过 PCB 散出，适合批量生产与模块化设计。
四、典型应用场景
- DC-DC 降压/升压变换器（同步整流或开关器件）
- 电源管理、负载开关与电子继电器替代
- 电机驱动下的半桥/全桥级（中等电流场合）
- 汽车电子（非发动机重要子系统）、工业控制与消费类电源适配器
五、封装与热管理建议
- 虽然器件 Pd 达到 100W，但实际耗散受 PCB 走线与散热铜面积影响较大。推荐在 PCB 底层和散热区增加大面积铜箔并使用过孔导热至散热层。
- 在高频开关应用中，保持引脚到驱动器/感应元件的走线最短，减小寄生电感与环路面积，以降低开关振铃与 EMI。
- 对于长期高温工作，应基于结温限制计算允许的平均电流并考虑散热器或风冷方案。
六、使用注意事项
- 驱动电压选择：若驱动电压只能到 4.5V，应按 30mΩ 的 RDS(on) 计算导通损耗；推荐在需要最低导通损耗时采用 10V 驱动。
- 开关损耗评估：Qg=11nC，开关频率较高时需关注驱动能量消耗与驱动器发热。
- 保护措施：建议在应用中加入合理的短路、过流与过温保护，以避免瞬态冲击导致的器件失效。
总结：HUF75321D3ST-VB 综合了低导通损耗、适中栅极电荷和宽温高功率耗散能力，适合中功率开关电源与工业驱动场合。设计时需重视 PCB 散热与驱动匹配，以发挥器件最佳性能。
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