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VBsemi AO4425-VB AO4425
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- VBsemi AO4425-VB
- Type
- VBSEMI
- Minimum package
- 4000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- VBSEMI
- Electronic Component
- AO4425-VB
- Electronic Component
- 1
- Package
- SO-8
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.16g
- Electronic Component
- 1
- Electronic Component
- BM0227676155
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 2.5W
- Electronic Component
- Electronic Component
- Electronic Component
- 4000
- Voltage(Vdss)
- 30V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AO4425-VB 产品概述
一、概述
AO4425-VB 是微碧半导体（VBsemi）推出的一款 P 沟道功率场效应晶体管，专为低压高电流的高侧开关和电源管理场景设计。器件耐压 30V，连续漏极电流 11.6A，采用 SO-8 封装，体积小、性能优良，适合移动设备电源路径控制、负载开关及反向保护等应用。
二、主要参数
- 类型：P 沟道 MOSFET（SO-8 封装）
- 漏源电压 Vdss：30V
- 连续漏极电流 Id：11.6A
- 导通电阻 RDS(on)：11mΩ @ |VGS|=10V；12mΩ @ |VGS|=4.5V
- 阈值电压 Vgs(th)：3V @ 250µA（为栅源电压幅值参考）
- 栅极电荷 Qg：43nC @ 10V；22nC @ 4.5V
- 输入电容 Ciss：1.96nF；反向传输电容 Crss：325pF；输出电容 Coss：380pF
- 耗散功率 Pd：2.5W
- 工作温度范围：-55℃ ～ +150℃
三、关键特性
- 低导通阻抗：在 |VGS|=10V 条件下 RDS(on) 仅 11mΩ，能显著降低导通损耗，提高效率。
- 中等栅极电荷：Qg 在 4.5V/10V 下分别为 22nC/43nC，切换能耗可控，适合中等开关频率应用。
- 紧凑封装与良好热特性：SO-8 封装便于自动贴装，配合合理 PCB 散热可满足 2.5W 的耗散能力。
- 宽温度范围：适合工业级环境。
四、典型应用
- 高侧电源开关与负载断开（便于在正电源侧实现快速通断）
- 电池管理与电源路径选择（电源切换、反向电流阻断）
- 低压 DC-DC 变换器的同步或旁路开关
- 汽车与工业控制中需要 30V 级别保护与控制的场景
五、设计与热管理建议
- 驱动电压：为达到标称 RDS(on)，建议在 |VGS|≈10V 驱动；在低电压驱动（4.5V）下仍能保持较低 RDS(on)。注意 P 沟道栅源电压的极性与幅值关系。
- 开关损耗：Qg 值提示在高频切换时开关损耗不可忽视，可通过降低开关频率或采用驱动级缓冲来减小损耗。
- PCB 布局：尽量缩短漏源与负载之间的走线，扩大铜箔面积并使用过孔或散热平面以提高热扩散能力。
- 热限与保护：器件 Pd 为 2.5W，在实际应用中应结合封装环境、铜面积与空气对流评估结温并必要时提供额外散热或限制通过电流以保证可靠性。
AO4425-VB 在小封装下提供了优秀的导通性能与适中的开关特性，适用于需要在 30V 以内实现高效高侧开关与电源管理的各类电子系统。
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