WMSIC Electronic Components

VBsemi AM2394NE-VB AM2394NE

ModelAM2394NE-VB
PackageSOT-23(TO-236)
BrandVBSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
VBsemi AM2394NE-VB
Type
VBSEMI
Minimum package
3000 编带

Technical parameters

Electronic Component
Electronic Component
Electronic Component
VBSEMI
Electronic Component
AM2394NE-VB
Electronic Component
1
Package
SOT-23(TO-236)
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.054g
Electronic Component
1
Electronic Component
BM0228586622
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
2.5W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
100V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

AM2394NE-VB 产品概述

一、概述

AM2394NE-VB 是 VBsemi(微碧半导体)推出的一款小封装 N 沟道功率 MOSFET,采用 SOT-23(TO-236)封装,面向需要 100V 耐压与小型化功率开关的应用场景。器件在中等电流等级下具有较低的栅极电荷和适中的导通电阻,适合高压、低至中等电流的开关或低侧功率开关场合。

二、主要电气参数(典型/标称)

  • 漏源电压 Vdss:100V
  • 连续漏极电流 Id:2A
  • 导通电阻 RDS(on):240mΩ @ Vgs=10V
  • 功耗 Pd:2.5W
  • 阈值电压 Vgs(th):2.8V @ Id=250µA
  • 总栅极电荷 Qg:5.2nC @ Vgs=10V(低栅极驱动能耗)
  • 输入电容 Ciss:190pF;输出电容 Coss:22pF;反向传输电容 Crss:13pF
  • 工作温度范围:-55℃ ~ +150℃

三、设计与应用建议

  • 开关性能:较小的 Qg 和 Ciss 有利于快速开关并降低驱动损耗,适合要求较快切换但电流不大的开关电源、继电器替代或驱动电路。Crss 较低可减小米勒效应,有利于稳定切换边沿。
  • 导通电阻与门限:RDS(on) 在 Vgs=10V 时为 240mΩ,适合以 10V 驱动的场景;Vgs(th)=2.8V 表示在 3.3V 驱动下不能保证达到标注的导通电阻,若系统为 3.3V logic,需评估实际导通能力或采用栅极升压驱动。
  • 热管理:SOT-23 封装功耗 Pd=2.5W(典型)依赖 PCB 热阻与铜箔面积,长时间或重复高功耗工作时应增加散热铜箔或采取并联器件/降低工作电流以控制结温。
  • 可靠性:宽温度范围(-55℃~+150℃)适应工业级环境;在高温或高应力条件下应留有裕量,按数据手册进行封装与焊接工艺控制。

四、典型应用场景

  • 开关电源高压侧或低侧开关(反激/正激/降压)
  • 便携式电源管理、电池充放电控制与保护开关
  • 小型马达驱动、继电器/灯负载开关
  • 需要 100V 耐压且空间受限的功率开关电路

五、选型与注意事项

  • 若系统栅极驱动电压仅为 3.3V,建议在评估导通电阻和功耗后确认是否满足要求,或使用驱动电压为 10V 的方案以达到标称 RDS(on)。
  • 确认最大 Vgs 值及瞬态耐受能力(请参见完整数据手册),避免超出栅极极限电压。
  • 在高频开关应用中,应结合 PCB 布局优化门极回路与散热路径,以降低 EMI 和温升。

AM2394NE-VB 以其 100V 耐压、较低栅极电荷和小巧 SOT-23 封装,适合对体积与开关效率有要求且电流在 2A 级别以内的工业与消费类电源管理场合。详细的极限参数与典型特性请参考厂商数据手册以便于最终电路设计验证。

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