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VBsemi AOD4130-VB AOD4130
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- VBsemi AOD4130-VB
- Type
- VBSEMI
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- VBSEMI
- Electronic Component
- AOD4130-VB
- Electronic Component
- 1
- Package
- TO-252-2
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.444g
- Electronic Component
- 1
- Electronic Component
- BM0264899085
- Operating Temperature
- 55℃~+175℃
- Power Dissipation(Pd)
- 100W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 60V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AOD4130-VB 产品概述
一、产品简介
AOD4130-VB 是微碧半导体（VBsemi）推出的一款 60V 单 N 沟道功率场效应管，封装为 TO-252-2（DPAK），采用台积电流片和长电科技封装工艺制造。器件额定漏源电压 Vdss=60V，持续漏极电流 Id=45A，导通电阻 RDS(on)=25mΩ（VGS=10V），阈值电压 Vgs(th) 典型约 2V（规范范围约 1–3V），适合中低压大电流开关场合。
二、主要参数要点
- 类型：N 沟道功率 MOSFET
- Vdss：60V
- Id（连续）：45A
- RDS(on)：25mΩ @ VGS=10V（VGS=20V 时亦具优良导通性能）
- Vgs(th)：约 2V（1–3V）
- 总栅极电荷 Qg：11nC @10V
- 输入电容 Ciss：1.5nF；输出电容 Coss：140pF；反向传输电容 Crss：60pF
- 功耗 Pd：100W（器件热管理依赖封装和散热设计）
- 工作温度范围：-55℃ ~ +175℃
三、性能特点与优势
- 低导通电阻：25mΩ 的 RDS(on) 在 10V 驱动下提供低导通损耗，适合高效率开关和导通场合。
- 中等栅极电荷：Qg=11nC 带来较平衡的开关损耗与驱动需求，兼容常见驱动器。
- 可靠封装：TO-252-2（DPAK）方便表面贴装并在合适 PCB 散热下支持较大功率密度。
- 宽工作温度：-55℃ 至 +175℃ 的额定温度范围提升在恶劣环境下的可靠性。
四、典型应用场景
- 开关电源与稳压模块（降压/同步整流）
- 电动车、电动工具驱动控制器与电机驱动逆变器（中低压段）
- LED 恒流驱动与功率调光电路
- 电源管理与功率开关阵列
五、使用与设计建议
- 驱动建议：为实现标称 RDS(on)，建议采用 10–12V 的栅极驱动电压；若使用 5V 驱动请注意导通损耗增加。
- PCB 布局：栅极回路尽量短且阻抗低，源极尽量靠近电源回路地铜箔以降低寄生电感，散热面积极小化热阻。
- 开关保护：在快速开关应用中建议配合合适的钳位（TVS）、阻尼或 RC 吸收网络以抑制过压与振铃。
- 并联使用：可并联以扩大电流能力，但需考虑 RDS(on) 匹配与公平电流分配，建议带小阻抗平衡或热均衡设计。
AOD4130-VB 在中低压高电流应用中提供了平衡的导通性能与开关性能，是追求效率与可靠性的常用器件选择。购买与设计前请参考厂方详细数据手册以获得完整特性曲线与封装热参数。
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