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VBsemi APM4010NUC-TRL-VB APM4010NUC
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- VBsemi APM4010NUC-TRL-VB
- Type
- VBSEMI
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- VBSEMI
- Electronic Component
- APM4010NUC-TRL-VB
- Electronic Component
- 1
- Package
- TO-252
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.4g
- Electronic Component
- 1
- Electronic Component
- BM0264573270
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 3.13W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 40V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
APM4010NUC-TRL-VB 产品概述
一、产品简介
APM4010NUC-TRL-VB 是 VBsemi（微碧半导体）推出的单片 N 沟道功率场效应晶体管，采用 Trench 制程工艺，台积电流片、长电科技封装。器件针对中等功率控制与驱动场合优化，额定耐压 40V，连续漏极电流高达 85A，适合电源转换、电动工具驱动与工业自动化等应用。
二、主要电气参数
- 漏源电压（Vdss）：40V
- 连续漏极电流（Id）：85A
- 导通电阻（RDS(on)）：5mΩ @ VGS=10V；6.5mΩ @ VGS=4.5V
- 阈值电压（Vgs(th)）：约 1.2～2.5V（标称 2.5V）
- 门极电荷（Qg）：80nC @ 10V（较大，需足够驱动能力）
- 输入电容（Ciss）：2.38nF；输出电容（Coss）：550pF；反向传输电容（Crss/Crss）：250pF
- 功耗耗散（Pd）：3.13W（封装、散热条件相关）
- 工作温度：-55℃ ～ +150℃
- 封装：TO-252（DPAK 类似）
三、性能亮点
- 低导通电阻在高电流工况下能有效降低导通损耗，适合低压大电流开关或同步整流。
- Trench 技术带来较好的导通/开关折衷性能，配合中等门极电荷可兼顾驱动和开关损耗。
- 宽温度范围与高电流能力适配工业级应用场景。
四、典型应用
- 开关电源（同步降压、LLC 次级整流）
- 电动工具或电机驱动模块（中低压子系统）
- 工业自动化控制与功率级开关单元
- 电池管理与逆变辅助电路
五、设计与使用建议
- 为达到标称 RDS(on)，门极驱动优先采用 10V 驱动电压；若受限于逻辑电平驱动，可在 4.5V 下工作但 RDS(on) 会升高（约 6.5mΩ）。
- 门极电荷 Qg=80nC 较大，驱动器需具备足够电流以实现所需开关速度，避免过长的上升/下降时间导致开关损耗与电磁干扰增大。
- 布局上尽量缩短信号回流路径，增厚铜箔、增加散热过孔，以降低导线电阻和改善热阻，确保在高电流下不过热。
- 注意器件的耗散功率与封装散热极限，必要时采取散热片或板级散热措施。
六、结论
APM4010NUC-TRL-VB 在 40V/85A 工况下提供低 RDS(on) 和工业级温度能力，适合中等功率且注重效率的开关与驱动场合。合适的门极驱动与良好散热设计可最大化其性能并保证长期可靠性。
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