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VBsemi DTS6400-VB DTS6400
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- VBsemi DTS6400-VB
- Type
- VBSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- VBSEMI
- Electronic Component
- DTS6400-VB
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.045g
- Electronic Component
- 1
- Electronic Component
- BM0265607386
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.66W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
DTS6400-VB（VBsemi）N沟道MOS场效应管产品概述
DTS6400-VB是微碧半导体（VBsemi） 推出的一款N沟道增强型MOS场效应管，采用SOT-23小型贴片封装，针对低功耗、高密度电子系统优化，兼具宽电压电流范围与快速开关特性，适用于便携设备、电源管理等多场景应用。
一、产品基本信息
项目 详情 品牌 微碧半导体（VBsemi） 器件类型 N沟道增强型MOSFET 封装形式 SOT-23（3引脚贴片） 核心定位 低压小功率高密度应用二、核心电参数特性
1. 电压与电流承载能力
- 漏源击穿电压（Vdss）：60V：满足12V/24V等低压直流系统的耐压需求，避免过压损坏；
- 连续漏极电流（Id）：4A：小封装下实现中等负载驱动能力，覆盖常规便携设备功率需求；
- 耗散功率（Pd）：1.66W：配合SOT-23封装热性能，无需额外散热片即可稳定工作。
2. 导通与阈值特性
- 导通电阻（RDS(on)）：86mΩ@Vgs=4.5V：低导通电阻显著降低导通损耗，提升电源转换效率；
- 阈值电压（Vgs(th)）：3V@Id=250uA：与3.3V/5V MCU IO口驱动能力匹配，无需额外驱动电路。
3. 开关与电容特性
- 栅极电荷量（Qg）：3.2nC@Vgs=4.5V：低Qg值加快开关切换速度，减少开关损耗，适合高频应用；
- 电容参数：输入电容（Ciss=180pF）、反向传输电容（Crss=13pF）、输出电容（Coss=22pF），低电容值降低米勒效应影响，优化开关性能。
三、封装与典型应用场景
1. 封装特点
SOT-23封装尺寸为2.9mm×2.5mm×1.1mm，体积小巧、引脚间距1.3mm，适配高密度PCB布局，可在有限空间内集成多路MOS管。
2. 典型应用
- 便携式电子：手机、蓝牙耳机、智能手环的电源开关、电池保护电路；
- 电源管理：DC-DC降压转换器、负载开关、线性稳压器辅助控制；
- 小型控制：小型电机驱动、LED照明驱动、传感器信号放大；
- IoT终端：可穿戴设备、物联网节点的功率控制电路。
四、性能优势分析
- 小封装高功率密度：SOT-23封装实现4A连续电流+60V耐压，优于同类小封装MOS管；
- 高效低损耗：86mΩ导通电阻+3.2nC栅极电荷，兼顾导通与开关损耗，提升系统效率；
- 宽温适应性：工作温度-55℃~+150℃，覆盖工业级环境（如户外设备、车载辅助系统）；
- 易驱动性：3V阈值电压匹配MCU，简化电路设计，降低BOM成本。
五、可靠性与应用注意事项
- 可靠性：符合RoHS环保标准，无铅封装，具备ESD抗静电能力，满足工业级可靠性要求；
- 注意事项：
① 栅极避免过压（最大Vgs=±20V），防止氧化层击穿；
② 结温不超过150℃，避免长时间过载；
③ 焊接采用回流焊，温度控制在260℃以内。
DTS6400-VB凭借小体积、低损耗、宽温范围与易驱动性，成为便携电子、电源管理等领域的高性价比选择，可有效简化设计并提升系统性能。
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