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VBsemi VBI2338
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- VBsemi VBI2338
- Type
- VBSEMI
- Minimum package
- 1000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- VBSEMI
- Electronic Component
- VBI2338
- Electronic Component
- 1
- Package
- SOT-89
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.154g
- Electronic Component
- 1
- Electronic Component
- BM0228045091
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 6.5W
- Electronic Component
- Electronic Component
- Electronic Component
- 1000
- Voltage(Vdss)
- 30V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
VBI2338 产品概述
VBI2338 是微碧半导体（VBsemi）推出的一款单通道 P 沟道功率场效应晶体管，面向中低压开关和电源管理应用。该器件在 SOT-89 小型封装中提供良好的导通性能与热稳定性，适合空间受限且需承受较高电流的便携和工业系统使用。
一、主要特性
- P 沟道 MOSFET，额定漏源电压（Vdss）30V，适合负载开关和高侧开关设计；
- 低导通电阻：RDS(on) = 50mΩ @ Vgs = 10V；56mΩ @ Vgs = 4.5V，兼顾低损耗与逻辑电平驱动；
- 栅极电荷 Qg = 25nC（10V），便于驱动器规划；
- 宽工作温度范围：-55 ℃ 至 +150 ℃，适用于严苛环境。
二、关键电气参数
- 连续漏极电流 Id = 7.6A（典型/最大使用需结合散热条件）；
- 功耗 Pd = 6.5W（封装和 PCB 散热限制需关注）；
- 输入电容 Ciss = 1.355nF，输出电容 Coss = 180pF，反向传输电容 Crss = 145pF；
- 阈值电压 Vgs(th) = 2.5V @ Ids = 250µA，适合部分低电压控制场合。
三、典型应用场景
- 便携设备和通信设备中的高侧负载开关；
- 电池保护、充放电管理与功率路径切换；
- DC-DC 变换器中的同步整流或回路切换；
- 需要小外形封装且电流需求中等的工业控制电路。
四、封装与热管理
- 封装形式：SOT-89，体积小，便于自动贴装与轻量化设计；
- 封装热阻相对较高，器件可承受 6.5W 的耗散功率，但在板级应用中建议加大铜箔散热或保持较低占空比以避免热过载；
- 高温工作能力良好（最高 +150 ℃），适合高温工况但需注意长期热应力对可靠性的影响。
五、选型与使用建议
- 若驱动电压充足（接近 10V），可获得最低 RDS(on) 与更优越的导通损耗；若仅有 4.5V 驱动，仍能保持较低的导通电阻（56mΩ）；
- 注意栅极驱动电荷 Qg 和栅极电容对驱动器瞬态电流的要求，驱动器需具备足够瞬态能力以保证开关速度与效率；
- 在高电流或连续导通场合，布线和散热设计需充分考虑，必要时评估并行器件或选择更大封装的替代品。
VBI2338 以其小型封装、适中的耐压和较低的导通电阻，为需要高侧 P 沟道开关的系统提供了平衡的方案，在空间受限且需兼顾性能与成本的设计中具有较高的实用价值。
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