WMSIC Electronic Components

VBsemi FDMS6681Z-VB FDMS6681Z

ModelFDMS6681Z-VB
PackageDFN-8(5X6)
BrandVBSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
VBsemi FDMS6681Z-VB
Type
VBSEMI
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
VBSEMI
Electronic Component
FDMS6681Z-VB
Electronic Component
1
Package
DFN-8(5X6)
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.14g
Electronic Component
1
Electronic Component
BM0265842985
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
66.6W
Electronic Component
Electronic Component
Electronic Component
5000
Voltage(Vdss)
30V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

FDMS6681Z-VB P沟道场效应管(MOSFET)产品概述

一、产品基本信息

FDMS6681Z-VB是VBsemi(微碧半导体) 推出的P沟道增强型MOSFET,单颗封装为DFN-8(5×6mm带暴露焊盘EP),小体积设计适配高密度电路布局,核心面向低电压大电流场景的功率控制需求。

二、核心电参数详解

该器件的关键参数直接决定应用适配性,核心指标如下:

  • 电压类:漏源击穿电压Vdss=30V(满足12V/24V低压系统裕量);栅极阈值电压Vgs(th)=1V(典型值,保证控制灵敏度)。
  • 电流与导通:连续漏极电流Id=75A(Ta=25℃时);导通电阻RDS(on)表现优异——3.2mΩ@10V Vgs(低损耗核心)、5mΩ@4.5V Vgs(兼容低压栅极驱动)。
  • 功率与电容:最大耗散功率Pd=66.6W;栅极总电荷量[email protected](开关损耗可控);输入电容Ciss=8.65nF@15V(驱动难度低)。
  • 温度范围:-55℃~+150℃(工业级宽温,极端环境稳定运行)。

三、关键性能特点

基于参数优势,该器件具备以下核心价值:

  1. 低导通损耗适配大电流:3.2mΩ的导通电阻可显著降低电流通过时的热损耗,尤其适合12V/24V系统中75A以内的连续输出(如DC-DC降压模块高压侧开关)。
  2. 宽温稳定性:覆盖工业级温度范围,无需额外散热补偿,可用于车载电源、户外储能等极端环境场景。
  3. 小封装高集成度:DFN-8(5×6mm)带暴露焊盘,体积仅为传统TO-252封装的1/3,且暴露焊盘直接连接PCB铜箔提升散热,适配便携式设备、高密度电源模块。
  4. 栅极驱动兼容:4.5V栅极电压即可实现5mΩ导通电阻,兼容TI TPS系列、ADI驱动IC等常见低压驱动芯片,降低电路设计难度。

四、典型应用场景

该器件的参数特性使其在多领域广泛适用:

  • 低压大电流电源:服务器/工业电源的12V输出端、电池充电器充放电控制;
  • 电池管理系统(BMS):电动工具、便携式储能的过流保护、充放电路径开关;
  • 电机驱动:扫地机器人、无人机等小型直流电机的正反转/调速控制;
  • 负载开关:笔记本、平板等便携式设备的电源通断控制(降低待机功耗)。

五、使用注意事项

  1. 栅极电压需控制在Vgs(off)范围内(参考 datasheet,通常≤-20V),避免过压损坏;
  2. 75A连续电流为Ta=25℃额定值,高温环境需按降额曲线调整使用电流;
  3. DFN-8封装焊接需匹配回流焊温度曲线,保证暴露焊盘与PCB充分焊接(提升散热效率)。

综上,FDMS6681Z-VB凭借低导通电阻、宽温范围与小封装优势,成为12V/24V低压大电流场景的高性价比功率器件选择。

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