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VBsemi SI9933ADY-T1-E3-VB SI9933ADY
Configuration
1 options
Configuration
23+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- VBsemi SI9933ADY-T1-E3-VB
- Type
- VBSEMI
- Minimum package
- 4000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- VBSEMI
- Electronic Component
- SI9933ADY-T1-E3-VB
- Electronic Component
- 1
- Package
- SOP-8
- Electronic Component
- 2 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.287g
- Electronic Component
- 1
- Electronic Component
- BM0265006195
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 2.5W
- Electronic Component
- Electronic Component
- Electronic Component
- 4000
- Voltage(Vdss)
- 30V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SI9933ADY-T1-E3-VB 产品概述
一、核心参数概览
SI9933ADY-T1-E3-VB 为双通道 P 沟道功率 MOSFET，单器件包含两个独立 P‑Channel。主要电气参数如下：
- 漏源耐压 Vdss：30 V（P 沟道器件，标称耐压 -30 V）
- 连续漏极电流 Id：7.3 A（单通道）
- 导通电阻 RDS(on)：35 mΩ @ VGS = -10 V；约 40 mΩ @ VGS = -4.5 V
- 栅阈电压 VGS(th)：典型范围约 -1 ～ -3 V（|Vth| ≈ 1 V 量级）
- 总栅极电荷 Qg：15 nC @ 4.5 V
- 输入/输出/反向电容：Ciss = 1.35 nF，Coss = 215 pF，Crss = 185 pF
- 功耗 Pd：2.5 W（SOP‑8 封装散热受限）
- 工作温度：-55 ℃ ～ +150 ℃
二、器件特点与优势
- Trench 工艺硅片（台积电流片）保证了较低的导通电阻与稳定的热特性，适合高功率开关应用。
- 双通道集成在 SOP‑8 小封装内，便于在高密度电路板上实现高侧开关或两路并行/冗余设计。
- 较低的总栅极电荷（15 nC @4.5 V）与中等寄生电容，兼顾开关速度与驱动能耗，适用于频率不极高的功率转换场合。
- 封装由长电科技（Changjiang）处理，器件品牌为 VBsemi（微碧半导体），可用于汽车与工业级别要求较高的场合。
三、典型应用场景
- 高侧开关与电源管理：电池供电设备、电源分配开关。
- 电机驱动与电机控制模块（作为并联或高侧隔离元件）。
- 汽车电子子模块中低/中功率开关应用（需按车规级要求做额外验证）。
- LED 驱动与照明模块中的高侧恒流或开关控制。
四、设计与使用建议
- 作为 P 沟道器件，常用于高侧开关以降低驱动复杂度；注意栅极驱动需给出合适的负向 VGS（相对源极）。
- 在 VGS = -4.5 V 下 RDS(on) 与 Qg 性能均衡，适用于驱动电压受限时的设计折中。若能提供 -10 V 驱动，可获得最低导通损耗。
- SOP‑8 封装 Pd 为 2.5 W，布局时需考虑铜箔散热、器件间距及热回流路径，必要时并联两通道或增加散热片以减小结温。
- 在开关速度、EMI 与效率之间权衡时，可通过门极电阻与软切换策略降低尖峰与发热。
五、封装与可靠性
- 封装：SOP‑8 表面贴装，适合自动化贴装与回流焊工艺。
- 环境与可靠性：工作温度范围宽（-55 ～ +150 ℃），适合工业与部分车规场合；但若在车规级关键位置使用，建议做完整的汽车级验证与应力测试。
总结：SI9933ADY‑T1‑E3‑VB 为一款面向高侧开关与中等功率场景的双通道 P 沟道 MOSFET，具有低 RDS(on)、合理的驱动电荷与紧凑 SOP‑8 封装，适合电源管理、LED 驱动与电机控制等应用。
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