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WILLSEMI WNM6002-3/TR WNM6002
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- WILLSEMI WNM6002-3 / TR
- Type
- WILLSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- WILLSEMI
- Electronic Component
- WNM6002-3/TR
- Electronic Component
- 1
- Package
- SOT-323
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.032g
- Electronic Component
- 1
- Electronic Component
- BM0153481799
- Operating Temperature
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
- Capacitor(Ciss)
- 23.37pF
- Gate (Qg)
- 1.2nC@10V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
WNM6002-3/TR 产品概述
一、产品简介
WNM6002-3/TR 是由著名电子元器件制造商 WILLSEMI(韦尔) 生产的一款高性能 N沟道场效应管（MOSFET）。该产品采用 SOT-323-3 封装，具有紧凑的体积和出色的电气特性，非常适合用于各种电子电路设计中，尤其是在移动设备、消费电子和工业控制等领域。
二、主要规格
- 功耗: 370mW
- 耐压: 60V
- 漏电流: 300mA
- 封装类型: SOT-323-3
- 类型: N沟道
这些参数使得 WNM6002-3/TR 在满足广大设计需求的同时，能够在较低功率的情况下高效运行，适合需要高电压和电流控制的应用场景。
三、产品特性
高电压耐受性: 具有60V的耐压能力，WNM6002-3/TR 可广泛应用于需要较高电压的电路，确保在瞬态和过载条件下的可靠性。
节能设计: 370mW的功耗意味着该MOSFET具有较低的导通电阻，能够有效降低功耗，提高能效，尤其适用于对待电源效率要求较高的系统。
紧凑的封装: SOT-323-3封装设计使得 WNM6002-3/TR 在板上占用极小的空间，便于放置在紧凑型电路中。
广泛的应用范围: 该MOSFET适用于开关电源、功率调节、LED驱动、马达控制等应用，提供高灵敏度和快速开关性能。
优异的热稳定性: 特别设计的结构提高了器件的热性能，在较高温度环境下依然保持良好的工作效率。
四、应用领域
WNM6002-3/TR 可用于以下领域和应用：
消费电子产品: 在手机、平板电脑和其他便携设备中，MOSFET可用于电源管理和信号切换，保证高性能和低功耗。
工业设备: 它能够在工控系统中实现高效的驱动控制，适合用于各种传感器和执行器的接口。
LED驱动: 对于需要高效率和高电压驱动的LED照明系统，WNM6002-3/TR 能够提供可靠的开关控制，保持灯光稳定。
汽车电子: 在汽车电气系统中，MOSFET能够承担起高压和高电流的任务，适合用于电源转换和电池管理系统。
五、总结
WNM6002-3/TR 是一款性价比高、性能优越的 N沟道 MOSFET，凭借其高耐压、低功耗和紧凑封装等特点，成为越来越多工程师和设计师青睐的选择。无论是在消费电子、工业控制还是LED照明等领域，这款元器件都能提供可靠的解决方案，助力各种应用的高效能与稳定性。
对于寻求在小型化和高效能之间找到平衡的设计师来说，WNM6002-3/TR 无疑是一个卓越的选择。通过将此产品集成到您的电路设计中，可以提高整体系统的性能，同时降低功耗，符合当今电子设备向绿色环保方向发展的趋势。
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