WMSIC Electronic Components

WILLSEMI WPM3401-3/TR WPM3401

ModelWPM3401-3/TR
PackageSOT-23-3L
BrandWILLSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WILLSEMI WPM3401-3 / TR
Type
WILLSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
WILLSEMI
Electronic Component
WPM3401-3/TR
Electronic Component
1
Package
SOT-23-3L
Electronic Component
1 P
Electronic Component
MOSFET
Electronic Component
0.045g
Electronic Component
1
Electronic Component
BM69416681
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1.7W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
30V
Capacitor(Ciss)
1.25nF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:WPM3401-3/TR MOSFET

一、产品简介

WPM3401-3/TR是一款高性能的P沟道场效应管(MOSFET),具有极佳的电子性能和高可靠性,特别适合用于低功耗电子电路和开关电源等多种应用场合。此器件由知名品牌WILLSEMI(韦尔)制造,封装采用紧凑的SOT-23-3L外形,使其在小型化设计中表现出色。

二、基本参数

  • 功率:1.3W
  • 电压:30V
  • 电流:4.6A
  • 沟道类型:P沟道
  • 封装类型:SOT-23-3L

三、特性与优势

  1. 高效能:WPM3401-3/TR具备高达4.6A的持续漏电流,适用于多种负载,可以高效驱动各种负载器件,包括电机、LED照明及其他低至中等功率的负载。

  2. 高耐压:其最大承受电压为30V,广泛适应低压应用,能够满足各种电路设计的要求,确保在高电压情况下的稳定性和安全性。

  3. 低导通阻抗:该MOSFET在导通状态下展示出极低的导通阻抗,能够有效降低功率损耗及热量产生,提高系统的整体效率,延长设备的使用寿命。

  4. 小型封装:采用SOT-23-3L封装,具有小巧、低占用面积的特点,特别适合空间受限的应用设计。其适应性强,可以方便地集成于各种电子产品中。

  5. 快速开关能力:MOSFET的开关特性优秀,能在较短的时间内在导通和关断状态之间快速切换,适合高频率的开关应用,减少延迟,提高系统响应速度。

四、应用领域

WPM3401-3/TR的广泛应用场景包括但不限于:

  • 功率开关:作为电源管理中的开关元件,能够有效控制电源的通断,特别适用于DC-DC转换器及其他电源模块。

  • 电动机驱动:适合用于电动机控制应用,如无刷DC电机和步进电机,提升电机的性能与可靠性。

  • LED驱动:可用作LED照明的控制开关,实现高效的能量管理,优化灯具设计。

  • 消费者电子产品:广泛应用于智能手机、平板电脑以及其他便携式电子产品,满足对薄型和轻量化设计的需求。

五、设计注意事项

在设计应用WPM3401-3/TR时,设计师应注意以下几点:

  • 散热管理:虽然该MOSFET具有较低的导通阻抗,但在高负载条件下仍需考虑适当的散热方案,以确保器件在安全的温度范围内工作。

  • PCB布局:在电路板设计中,应尽量缩短MOSFET与负载之间的连接路径,降低寄生电感,以保证快速开关特性,实现更好的动态响应。

  • 电源电压:确保电源的电压在30V以下,以防器件损坏。同时,尽量避免瞬态电压冲击造成的影响。

六、总结

WPM3401-3/TR作为一款性能优异的P沟道MOSFET,凭借其高效能、小型封装和宽广的应用场景,成为现代电子设计中不可或缺的元件之一。其在电源管理、马达驱动及照明控制等领域的表现,满足了市场对于高性能和高可靠性的广泛需求。通过合理设计与应用,WPM3401-3/TR将有助于提升电子产品的效能和竞争力。

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