WMSIC Electronic Components

WILLSEMI WNM2021-3/TR WNM2021

ModelWNM2021-3/TR
PackageSOT-323
BrandWILLSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
WILLSEMI WNM2021-3 / TR
Type
WILLSEMI
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
WILLSEMI
Electronic Component
WNM2021-3/TR
Electronic Component
1
Package
SOT-323
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.035g
Electronic Component
1
Electronic Component
BM0093065386
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
370mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

WNM2021-3/TR 产品概述

产品描述

WNM2021-3/TR 是一款高性能的 N 沟道场效应管(MOSFET),由知名品牌 WILLSEMI(韦尔)生产。该组件采用 SOT-323 表面贴装封装,专为各种电子应用而设计。其具有工作的电压最高可达 20V,能够承载的电流最大可达 820mA,功耗限制为 310mW,适合用于小功率开关和线性调节电路。

技术规格

  • 类型: N 沟道 MOSFET
  • 封装: SOT-323
  • 最大漏源电压 (V_DS): 20V
  • 最大漏电流 (I_D): 820mA
  • 最大功耗 (P_D): 310mW
  • 工作温度范围: -55°C 至 +150°C
  • 传输开关特性: 低开关电压(V_GS(th))可实现更高的效率和快速响应时间。

应用场景

WNM2021-3/TR 的多功能性使其适用于广泛的应用场景,包括但不限于:

  1. 电源管理: 作为开关元件实现金融设备、小型电源模块和电池管理系统的高效开关。

  2. 信号开关: 用于音频和视频设备的信号切换,在信号完整性要求较高的场合,提供优异的低噪声性能。

  3. 电子消费品: 在智能手机、平板电脑及其他便携式设备中的电源调控、负载切换等功能。

  4. 车载电子: 在汽车电子系统中,如电池管理、智能照明及辅助驾驶系统,WNM2021-3/TR 以其紧凑的封装和高效性来提升设备的能量管理和性能。

  5. 工业自动化: 在可编程逻辑控制器(PLC)和伺服电机驱动中,作为功率开关器件助力实现高精度和高效能。

优势与特性

  • 高导通性与低导通电阻: WNM2021-3/TR 设计有优良的导电特性,低导通电阻(R_DS(on))使得在大电流下能有效降低功耗,提升热管理效率。

  • 快速开关性: 该 MOSFET 具备较快的开关特性,使其能够在高频应用中实现卓越的响应速度,适合于频繁切换的应用场合。

  • 优异的热稳定性: 该元器件支持在较广的温度范围内工作,且具备较高的耐压性,使其在多种苛刻环境中均能稳定运行。

  • 小型化封装: SOT-323 封装确保了元件的紧凑性和轻量化,易于在小型电路板上布线,适合现代高集成度电子产品。

设计建议

在使用 WNM2021-3/TR 时,建议设计师用适当的栅极驱动电压V_GS确保MOSFET的充分打开,以实现最佳性能。此外,应注意元件的功耗和热量管理,可能需要在高功率应用中添加散热措施,以增强系统的稳定性和耐用性。

结论

综上所述,WNM2021-3/TR 是一款高度集成、性能卓越的 N 沟道 MOSFET,适用于多种电子应用场景。凭借其出色的开关特性、良好的热稳定性以及小型轻便的设计,它将能够满足现代电子设备在功耗和体积方面的严格要求,是电子工程师进行设计的一款理想元件。

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