WMSIC Electronic Components

WILLSEMI WNM2016-3/TR WNM2016

ModelWNM2016-3/TR
PackageSOT-23
BrandWILLSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WILLSEMI WNM2016-3 / TR
Type
WILLSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
WILLSEMI
Electronic Component
WNM2016-3/TR
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.039g
Electronic Component
1
Electronic Component
BM69417046
Power Dissipation(Pd)
800mW
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V
Capacitor(Ciss)
500pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

WNM2016-3/TR 产品概述

1. 产品简介

WNM2016-3/TR 是一款由韦尔半导体(WILLSEMI)推出的 N 沟道场效应管 (MOSFET),专为广泛的电子应用而设计。该器件在 SOT-23 封装中提供了优越的性能,具有额定功率达到 700mW,击穿电压高达 20V,持续电流达 2.9A。这使得 WNM2016-3/TR 在多种电子电路中非常适用,特别是在需要高效率和低功耗的场合。

2. 主要规格

  • 器件类型: N 沟道 MOSFET
  • 最大功耗: 700 mW
  • 最大工作电压: 20 V
  • 连续放电电流: 2.9 A
  • 封装: SOT-23
  • 动态特性: 具有出色的开关速度和低导通电阻,确保高效的功率转换和信号处理。

3. 产品特点

  • 高效能: WNM2016-3/TR MOSFET 设计上的高导通特性以及较低的导通电阻,不仅能有效降低功耗,还能提升电路的整体效率。
  • 宽应用范围: 适用于开关电源、逆变器、DC-DC 转换器等各个领域,在电动机驱动和电源管理中也表现优异。
  • 简洁的封装设计: SOT-23 封装小巧紧凑,适合高密度布线的电路板,方便在有限空间内实现集成。
  • 标准化接口: 兼容多种工业标准,有利于不同设备间的兼容性和互换性。

4. 应用领域

WNM2016-3/TR MOSFET 可广泛应用于以下领域:

  • 开关电源: 利用其高开关速度,应对不断变化的负载,提高电源效率和稳定性。
  • LED 驱动: 此器件的稳定运行可以高效驱动 LED 照明系统,提升光源的一致性与亮度。
  • 电动工具: 在电动机驱动系统中,WNM2016-3/TR 能够提供快速响应与高传导效能。
  • 消费电子: 适用于手机、平板电脑及其他便携设备的电源管理和信号放大。
  • 汽车电子: 在电动汽车和自动驾驶系统中,WNM2016-3/TR 可以用于电源转换、驱动和控制模块。

5. 性能优势

通过其优化设计,WNM2016-3/TR 实现了高效的开关特性,能在更小的热耗散下运行,从而提升可靠性。此外,其长期的热稳定性使其在高温环境下依然能够可靠工作。

6. 整体总结

WNM2016-3/TR N 沟道 MOSFET 是一种高性能、低功耗的电子元器件,适合于多种应用场景,尤其是在需要高效率和高可靠性的电源管理和控制领域。随着科技的进步,对高效率、高集成度的电子元件需求日益增长,WNM2016-3/TR 便以其卓越的性能特点,成为工程师在设计现代电子设备时的理想选择。通过采用 SOT-23 封装,提高了设计灵活性和空间利用率,使得其在当前市场中具有较强的竞争力。

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