WMSIC Electronic Components

WILLSEMI WNM3013-3/TR WNM3013

ModelWNM3013-3/TR
PackageSOT-723
BrandWILLSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WILLSEMI WNM3013-3 / TR
Type
WILLSEMI
Minimum package
8000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
WILLSEMI
Electronic Component
WNM3013-3/TR
Electronic Component
1
Package
SOT-723
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.014g
Electronic Component
1
Electronic Component
BM69417260
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
380mW
Electronic Component
Electronic Component
Electronic Component
8000
Voltage(Vdss)
50V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:WNM3013-3/TR N沟道MOSFET

一、引言

在现代电子设备中,场效应管(MOSFET)作为一种重要的开关和放大元件,广泛应用于功率管理、信号调理、开关电源和自动化控制等场合。本产品WNM3013-3/TR是由WILLSEMI(韦尔)公司生产的一款高性能 N沟道 MOSFET,具有380mW的功率处理能力,50V的击穿电压和250mA的漏电流,采用SOT-723封装,极具市场竞争力。

二、基本规格

  • 产品名称:WNM3013-3/TR
  • 类型:N沟道MOSFET
  • 最大功率:380mW
  • 最大漏电压:50V
  • 最大漏电流:250mA
  • 封装类型:SOT-723
  • 品牌:WILLSEMI(韦尔)

三、产品特性

  1. 高功率处理能力 WNM3013-3/TR能够支持高达380mW的功率处理,这使得其在各种应用中都能实现高效工作,包括开关电源、LED驱动等。

  2. 较高的击穿电压 最大漏电压达到50V,使得该MOSFET适用于较高电压的应用场合,同时提高了系统的可靠性和安全性,避免元件在过电压工作时发生击穿。

  3. 适中的漏电流 250mA的最大漏电流适用于大多数低功率管理场合,支持较高的开关频率下的工作,满足了客户对效率与性能的兼顾要求。

  4. 小型封装(SOT-723) SOT-723封装使得WNM3013-3/TR非常适合于小型化设计的电子产品,如便携设备、消费电子、工业控制等,有助于节省PCB空间并简化电路设计。

  5. 高效的开关特性 作为N沟道MOSFET,WNM3013-3/TR在通态导通时具有较低的导通电阻,能够有效提升开关效率,减少功耗。这一点在高频开关应用中尤为重要。

四、应用场景

WNM3013-3/TR的特性使其适应了多种应用场景,包括但不限于:

  • 开关电源:可作为主开关元件,提供高效、稳定的电源输出;
  • LED驱动电路:适合用于LED照明的开关与调光控制,实现高效驱动;
  • 电机控制:在小功率直流电机控制中,可作为开关元件实现 PWM 控制;
  • 移动设备:在智能手机、平板电脑等便携设备中,由于其小型封装和高效性能,非常适合用于电源管理电路;
  • 消费电子产品:在各种消费电子中,实现高效、紧凑的功率调节。

五、总结

WNM3013-3/TR N沟道MOSFET是WILLSEMI公司推出的一款高性价比电子元件,凭借其380mW的功率处理能力、50V的击穿电压、250mA的漏电流及小巧的SOT-723封装,满足了现代电子产品对高效率、小尺寸的设计需求。无论是开关电源、LED驱动还是移动设备等广泛应用场景,这款产品都表现出优越的性能和可靠性,必将成为设计工程师的优选元件。

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