WMSIC Electronic Components

WILLSEMI ESD56301D04-2/TR ESD56301D04

ModelESD56301D04-2/TR
PackageDFN1610-2L
BrandWILLSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WILLSEMI ESD56301D04-2 / TR
Type
WILLSEMI
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
WILLSEMI
Electronic Component
ESD56301D04-2/TR
Electronic Component
1
Package
DFN1610-2L
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.014g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
480pF
Electronic Component
BM0227309672
Operating Temperature
40℃~+85℃
Voltage
11V
Electronic Component
IEC 61000-4-5;IEC 61000-4-2

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ESD56301D04-2/TR 产品概述

一、产品简介

ESD56301D04-2/TR 是 WILLSEMI(韦尔)推出的一款单路单向瞬态抑制器(ESD/Surge Protect diode),采用 DFN1610-2L 小封装设计,专为满足工业与消费电子中对静电放电(ESD)和雷击浪涌(Surge)保护的需求而开发。器件对 IEC 61000-4-2(ESD)与 IEC 61000-4-5(浪涌)标准兼容,适用于各种接口与电源防护场合。

二、主要电气参数

  • 钳位电压(Vc):11 V(典型峰值钳位表现,取决于测试条件)
  • 工作温度:-40 ℃ ~ +85 ℃
  • 击穿电压(Vbr):6 V
  • 反向截止电压(Vrwm):4.85 V
  • 峰值脉冲功率(Ppp):2 kW @ 8/20 μs
  • 峰值脉冲电流(Ipp):180 A @ 8/20 μs
  • 反向漏电流(Ir):1 μA(典型)
  • 结电容(Cj):480 pF(典型)
  • 通道数:单路;极性:单向;类型:ESD

三、特性与优势

  • 高能量吸收能力:在 8/20 μs 波形下能承受 2 kW 峰值功率与 180 A 峰值电流,适合对瞬间高能脉冲的防护。
  • 低漏电与稳定阈值:反向漏电仅 1 μA,有利于减少静态功耗;4.85 V 的反向截止电压与 6 V 的击穿电压保证在正常工作电压下可靠隔离。
  • 紧凑低感封装:DFN1610-2L 小体积、低寄生电感,提升响应速度并有助于电路板节省空间。
  • 符合行业抗扰度标准:通过 IEC 61000-4-2/4-5 要求,适合需要电磁兼容(EMC)与浪涌保护的系统设计。

四、典型应用场景

  • 电源输入防护(小功率电源、充电口保护)
  • 工业控制与传感器接口的雷击与静电保护
  • 消费电子设备的接口保护(按键、控制信号线、辅助电源)
  • 通信与物联网节点中对端口的浪涌抑制(当允许较高结电容时)

注:由于结电容较高(480 pF),不建议用于对信号完整性要求很高的高速数据线(如高速 USB/高速差分对)。更适合电源或低速/控制信号保护场合。

五、设计与布局建议

  • 尽量将器件布局靠近被保护节点并靠近地线,缩短走线长度以降低吸收路径的感性阻抗。
  • 对于单向器件,确认线路极性与保护方向一致,保证在过压时钳位于接地侧。
  • 若与滤波元件共同使用,注意与电容或共模器件的交互,避免过多并联容性影响系统响应。
  • 建议在 PCB 设计中考虑适当的散热铺铜,提升脉冲能量承受能力与可靠性。

六、封装与订购信息

  • 型号:ESD56301D04-2/TR
  • 品牌:WILLSEMI(韦尔)
  • 封装:DFN1610-2L(带卷盘包装,TR 表示 Tape & Reel)

该器件适用于需兼顾大能量吸收与小封装占用的保护方案,选型时请参考系统峰值电压、电流与对信号带宽的要求,以确保保护器件与整体电路兼容。

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