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WILLSEMI WNM2030-3/TR WNM2030
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- WILLSEMI WNM2030-3 / TR
- Type
- WILLSEMI
- Minimum package
- 8000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- WILLSEMI
- Electronic Component
- WNM2030-3/TR
- Electronic Component
- 1
- Package
- SOT-723
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.013g
- Electronic Component
- 1
- Electronic Component
- BM69416810
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 430mW
- Electronic Component
- Electronic Component
- Electronic Component
- 8000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：WNM2030-3/TR
WNM2030-3/TR 是一款由韦尔半导体 (WILLSEMI) 出品的 N沟道场效应管 (MOSFET)，该元件专为要求高效能与紧凑型设计的现代电子产品而设计。该MOSFET广泛应用于各种电子电路中，包括开关电源、信号放大器和功率管理等。其封装采用了 SOT-723，这种小型封装非常适合便携式设备以及空间受限的应用。
主要规格
- 功率额定值：370mW
- 漏极-源极电压（Vds）：20V
- 漏极电流（Id）：880mA
- 沟道类型：N沟道
- 封装类型：SOT-723
结构与特性
WNM2030-3/TR 采用N沟道结构，具有较低的导通电阻，能够在保证小小的功率损耗的同时，提供较大的电流通过能力。其最大漏极电流为880mA，使其在负载条件下的表现尤为优异。
MOSFET的工作原理基于电场效应，这意味着，当施加在门极 (Gate) 的电压超过阈值电压时，通道便会开启，允许电流从漏极 (Drain) 流向源极 (Source)。相比于传统的BJT (双极型晶体管)，MOSFET在开关速度、输入阻抗和温度稳定性上表现得更为优越。
应用场景
WNM2030-3/TR 的应用场景十分广泛，适用于：
开关电源：由于其高效率和小封装，能够在开关电源电路中降低空载功耗，同时提高稳压性能。
电机驱动：在小型电机控制电路中，MOSFET的快速开关特性使其能够实现精准的电机控制，尤其适用于玩具、家电和便携式设备等。
信号放大器：其高增益和低噪声特性使其成为音频放大器和其他信号处理电路的理想选择。
LED驱动：WNM2030-3/TR 可以用于LED驱动电路中，通过调节MOSFET的导通时间来控制LED的亮度。
设计注意事项
在使用WNM2030-3/TR设计电路时，需要注意以下几点：
驱动电压：确保施加在门极的电压能有效地超过其阈值电压，以保障MOSFET处于完全导通状态。
散热设计：尽管此器件具有较低的功率损耗，适当的散热措施也很重要，尤其在高于额定电流的负载条件下。
电流限制：为保护MOSFET，在电路中设计合理的电流保护措施，以避免因过流而导致的器件损坏。
结论
WNM2030-3/TR 是一款高效、可靠的N沟道MOSFET，凭借其卓越的性能和灵活的应用能力，成为现代电子设计中不可或缺的组成部分。无论在任何需要高效电流控制的应用中，WNM2030-3/TR 都表现出众，值得工程师和设计师深度考虑与应用。
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