WMSIC Electronic Components

WILLSEMI ESD56201D15-2/TR ESD56201D15

ModelESD56201D15-2/TR
PackageDFN1610-2L
BrandWILLSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WILLSEMI ESD56201D15-2 / TR
Type
WILLSEMI
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
WILLSEMI
Electronic Component
ESD56201D15-2/TR
Electronic Component
1
Package
DFN1610-2L
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.013g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
325pF
Electronic Component
BM0227686254
Operating Temperature
40℃~+85℃
Voltage
27V
Electronic Component
IEC 61000-4-5;IEC 61000-4-2

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ESD56201D15-2/TR 产品概述

一、产品简介

ESD56201D15-2/TR 是 WILLSEMI(韦尔)出品的一款单路单向 TVS/ESD 钳位器件,用于对静电放电(ESD)和电源浪涌(Surge)提供快速保护。器件采用紧凑 DFN1610-2L 封装,适合空间受限的消费电子、工业接口与电源防护设计。该型号同时满足 IEC 61000-4-2(ESD)和 IEC 61000-4-5(浪涌)等级要求,适配常见的系统防护规范。

二、主要规格(关键参数)

  • 型号:ESD56201D15-2/TR(品牌:WILLSEMI / 韦尔)
  • 类型:TVS(ESD)单向
  • 通道数:单路
  • 反向工作电压 Vrwm:15 V
  • 击穿电压 Vbr:17.5 V
  • 钳位电压(典型):27 V(Ipp 测试条件见下)
  • 峰值脉冲电流 Ipp:60 A @ 8/20 µs
  • 反向漏电流 Ir:100 nA
  • 结电容 Cj:325 pF(典型)
  • 工作温度范围:-40 ℃ ~ +85 ℃
  • 封装:DFN1610-2L
  • 认证/防护等级:符合 IEC 61000-4-5 与 IEC 61000-4-2

三、功能特点与优势

  • 响应速度快:针对瞬态过压(ESD)有极短的钳位时间,可有效吸收瞬态能量,保护下游IC。
  • 高能量吸收能力:在 8/20 µs 波形下可承受 60 A 峰值冲击,适合浪涌与放电事件。
  • 低漏电流:100 nA 的反向漏电有利于电源 rails 或敏感模拟电路保持低静态损耗。
  • 紧凑封装:DFN1610-2L 占板面积小,适合移动设备、接口板及空间受限场合。
  • 标准兼容:满足 IEC 61000-4-2/4-5 要求,提高系统通过 EMC/安全测试的可靠性。

四、典型应用场景

  • 电源轨防护(直流 15 V 及以下电源线)
  • I/O 接口保护(按 Cj=325 pF 特性,更适合电源或低速信号线)
  • 通用接口与连接器(外部供电线、传感器供电)
  • 工业控制与通信设备的浪涌/静电保护

注意:由于结电容较大(325 pF),不推荐用于高速差分信号(如 USB3.x、PCIe 等)或对带宽敏感的高速接口,否则可能影响信号完整性。

五、封装与 PCB 布局建议

  • 将 TVS 器件尽可能靠近被保护的接头或连接器安装,以缩短寄生感抗和回路面积。
  • 使用短且宽的走线连接至接地平面,若为多层板建议增加接地过孔以降低感抗和提高散热能力。
  • 焊盘与焊膏设计按厂商 DFN1610-2L 推荐脚位进行,避免过量焊膏导致焊接缺陷。
  • 在高能量吸收场合,检查周边元件绝缘与间距,避免被钳位电压影响的敏感器件暴露在受压区。

六、选型要点与注意事项

  • 若目标为高频或高速数据线保护,应优先考虑结电容更低的 TVS 方案。
  • 钳位电压 27 V(在 60 A/8/20 µs 条件下)决定了能否保护下游器件,请确认被保护器件允许承受的短时间过压。
  • 工作电压 Vrwm=15 V,适用于 15 V 及以下的直流场景;高于此值的电源需选更高 Vrwm 的器件。
  • 出于可靠性考虑,设计时建议按实际系统可能遭遇的 ESD/Surge 能量留有裕量,而非仅参考典型参数。

如果需要,我可以根据您的具体应用(例如电压等级、接口类型、板上空间及通流需求)提供更精确的布局建议或替代器件比较。

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