WMSIC Electronic Components

WILLSEMI WNM2016A-3/TR WNM2016A

ModelWNM2016A-3/TR
PackageSOT-23
BrandWILLSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WILLSEMI WNM2016A-3 / TR
Type
WILLSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
WILLSEMI
Electronic Component
WNM2016A-3/TR
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.04g
Electronic Component
1
Electronic Component
BM0005117930
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1.4W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

WNM2016A-3/TR 是一款基于绝缘栅场效应管(MOSFET)技术的电子元器件,由知名品牌 WILLSEMI(韦尔)生产。该器件采用 SOT-23-3 封装,非常适合在空间受限的电子电路中使用。以下是对 WNM2016A-3/TR 的详细概述,包括其结构特点、性能参数以及应用场景。

产品概述

一、技术背景

绝缘栅场效应管(MOSFET)是一种非常重要的半导体器件,因其高输入阻抗、快速开关速度以及优良的热稳定性,广泛应用于开关电源、马达驱动、线性调节器等多种场合。WNM2016A-3/TR 作为一款高性能的 N-channel MOSFET,更是凭借其优越的性能,满足了现代电子设备对小体积、高集成度和高效率的需求。

二、封装与尺寸

WNM2016A-3/TR 采用 SOT-23-3 封装,具有较小的外形尺寸。这种封装形式只需占用极少的电路板空间,使得其在手持设备、便携式电子产品及其他小型设备中被广泛应用。SOT-23-3 封装不仅便于在自动化生产线上的贴装,且具备良好的散热性能,有利于提高设备的稳定性和可靠性。

三、性能参数

WNM2016A-3/TR 的一些关键性能参数包括:

  • 最大漏极源极电压 (V_DS):通常在 20V 左右,使其在多种电源电压环境下能够稳定工作。
  • 最大漏极电流 (I_D):通常可达数百毫安,适用于较大功率负载的驱动。
  • 门极阈值电压 (V_GS(th)):通常在 1V 到 3V 之间,确保在低电压驱动条件下也能可靠开关。
  • R_DS(on):在低于 100mΩ 的范围内,可以有效降低导通损耗,提升整体效率。

值得注意的是,WNM2016A-3/TR 的小尺寸和高导通性能使其非常适合在随时间变化的负载条件下工作,极大加强了其在动态负载条件下的可靠性。

四、应用场景

由于其优异的电性能和小型化设计,WNM2016A-3/TR 适用于多种应用场景,包括但不限于:

  1. 开关电源:WNM2016A-3/TR 可以用作开关电源中的主开关元件,负责控制电源的输出稳定与开关频率。
  2. 马达驱动:可用于直流电机驱动,在电动工具、家电和小型机械设备等领域发挥重要作用。
  3. 电池管理:在便携式设备中,MOSFET 可用于电池的充放电管理,确保设备的高效能与长续航。
  4. LED 驱动:适合用于 LED 驱动电路,通过有效控制 LED 的工作状态,提升亮度及能效。

五、总结

总体而言,WNM2016A-3/TR 是一款高性价比、功能强大的 N-channel MOSFET,凭借其小尺寸和高效能,在众多电子产品中得到了广泛应用。其高输入阻抗、低导通电阻和良好的开关特性使其成为现代电子设备中不可或缺的核心组件之一。随着电子技术的发展,对高性能 MOSFET 的需求将会持续增长,WILLSEMI 的这一产品无疑为未来的电子设计提供了强有力的支持。

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