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WILLSEMI WPM2341-3/TR WPM2341
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- WILLSEMI WPM2341-3 / TR
- Type
- WILLSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- WILLSEMI
- Electronic Component
- WPM2341-3/TR
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.039g
- Electronic Component
- 1
- Electronic Component
- BM69417063
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.25W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
WPM2341-3/TR 产品概述
一、产品基本信息
WPM2341-3/TR是一款高性能的P沟道MOSFET，采用SOT-23-3L封装，具有750mW的功率处理能力、20V的耐压水平和3.5A的持续电流输出。这款元器件由著名的半导体制造商韦尔（WILLSEMI）生产，专为低功耗和高效率的电子应用而设计。
二、技术参数
- 类型：P沟道MOSFET
- 封装：SOT-23-3L
- 最大功率：750mW
- 耐压：20V
- 持续电流：3.5A
- 阀值电压（Vgs）：适合在较低电压下操作，保证晶体管在强制导通和完全关断状态中表现优异。
- 输入电容（Ciss）：低输入电容特性使其在高速开关应用中具有更好的响应速度。
三、工作原理
场效应管（MOSFET）是一种利用电场效应控制电流的器件。WPM2341-3/TR的P沟道特性使其适合在负载开关和电源管理应用中广泛使用。当施加在栅极的电压低于源极电压时，MOSFET导通，电流在源极和漏极之间流动；反之，当栅极电压高于源极电压时，设备会关闭，切断电流。
四、应用领域
- 开关电源：由于其高效能和快速开关能力，WPM2341-3/TR可以有效用于开关电源（SMPS）中的负载开关。
- 电源管理：适合作为各种电子设备中的电源管理元件，例如：适配器、充电器等。
- 电机驱动：在驱动小电机的电路中，该MOSFET可用作可控开关，控制电机的启停和逆转。
- LED照明：在LED驱动电路中，WPM2341-3/TR可以控制LED光源的开关和调光功能。
- 消费电子产品：广泛应用于日常消费类电子产品如手机、平板电脑和个人电脑等。
五、优势特点
- 低导通电阻：这一特性可显著降低功耗，提高整体系统效率。在低电压和低电流条件下，能够更好地管理功率损耗。
- 快速开关特性：该MOSFET具有快速的开关响应能力，特别适合于高频应用下的操作，确保整体系统的快速反应能力。
- 可靠性：作为专业生产的MOSFET，WPM2341-3/TR在性能和可靠性方面经过严格的测试，适合在严苛的环境下运行。
六、结论
WPM2341-3/TR是一款性能卓越的P沟道MOSFET，具有广泛的应用潜力和优异的电气特性。其良好的开关特性、低导通电阻以及高效能，使其成为现代电子设备设计中不可或缺的元器件。无论是用于开关电源还是电机驱动，WPM2341-3/TR都能有效满足设计需求，是研究和开发领域中值得考虑的优质组件。选择WPM2341-3/TR，您将为您的项目注入强大的动力。
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