WMSIC Electronic Components

WILLSEMI WPM1480-3/TR WPM1480

ModelWPM1480-3/TR
PackageSOT-323
BrandWILLSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WILLSEMI WPM1480-3 / TR
Type
WILLSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
WILLSEMI
Electronic Component
WPM1480-3/TR
Electronic Component
1
Package
SOT-323
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.034g
Electronic Component
1
Electronic Component
BM69417195
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
290mW
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

WPM1480-3/TR 产品概述

一、产品简介

WPM1480-3/TR是一款由WILLSEMI(韦尔)公司推出的P沟道场效应管(MOSFET),其在功率处理和高效率方面具有优异的性能,是各种电子电路设计中不可或缺的关键元器件。该型号的MOSFET特别适用于低压、高电流的应用场景,如开关电源、负载驱动以及信号调节等领域。

二、产品特性

  1. 封装形式及尺寸
    WPM1480-3/TR采用SOT-323-3封装,这种封装具有体积小、散热性能良好等优点,可以轻松集成到各种小型电子设备中,满足现代电子产品对空间的苛刻要求。SOT-323封装的标准尺寸为2.0mm x 2.0mm,便于在高密度电路板设计中实现更小的占位。

  2. 电气特性

    • 最大功率: 290mW,适合短时间内的高功率应用。
    • 最大漏极-源极电压(VDS): 20V,确保其在较低电压下仍然能够安全、稳定地工作,适合电池供电或低电压电路。
    • 最大漏极电流(ID): 1.4A,足以驱动较大的负载,符合多种应用需求。
  3. 优异的开关性能
    WPM1480-3/TR具备较低的导通电阻(RDS(on)),在开关操作时具备较低的能量损耗。这一特点使其在高频率开关应用中尤其受青睐,如在DC-DC变换器和电机驱动器中。

  4. 良好的热稳定性
    它的设计允许在一定范围内进行过载操作,同时能够有效散热,保证器件在高负载下工作时的可靠性及耐久性。

三、应用领域

由于其出色的电气特性和紧凑的封装设计,WPM1480-3/TR可广泛应用于下列领域:

  • 移动设备: 由于其小巧的封装和低功耗特性,非常适合用在智能手机、平板电脑和其他便携式设备的电源管理模块中。
  • 电源管理: 在开关电源(SMPS)中,该MOSFET可以用于转换和调节电压。
  • 电机控制: 可应用于直流电机驱动和步进电机控制,为电机提供快速的开关和精确的调速。
  • LED驱动: 适合用于LED驱动电路中,以实现更高的光效和能量效率。

四、设计推荐

在设计使用WPM1480-3/TR的电路时,需要注意以下几点:

  1. 散热考虑: 尽管该MOSFET在自身性能上具备高效能,但在高负载条件下工作时仍需考虑散热设计,必要时可增加散热片或提高PCB的散热能力。

  2. 驱动电平: 确保栅极驱动电平能够充分开启MOSFET,以实现最低的导通电阻,提升电路的整体效率。

  3. 保护电路: 为防止过流和过压,建议设计反向保护和过流保护电路,提高系统的可靠性和安全性。

五、总结

WPM1480-3/TR是一款高性能的P沟道MOSFET,凭借其出众的电气特性、较小的封装尺寸及优良的热性能,成为了电子设计工程师非常喜爱的选择。无论是在消费电子、工业应用还是通信设备中,均可发挥重要作用,为现代电子产品的高效运行提供坚实的保障。选择WPM1480-3/TR,您将获得可靠和高效的解决方案,为您的项目带来更高的价值。

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