WMSIC Electronic Components

WILLSEMI ESD5425E-6/TR ESD5425E

ModelESD5425E-6/TR
PackageSOT-23-6L
BrandWILLSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WILLSEMI ESD5425E-6 / TR
Type
WILLSEMI
Minimum package
3000

Technical parameters

Electronic Component
WILLSEMI
Electronic Component
ESD5425E-6/TR
Electronic Component
1
Package
SOT-23-6L
Electronic Component
Electronic Component
Type
TVS
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.05g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
3pF
Electronic Component
BM0258734277
Voltage
11.8V
Electronic Component
IEC 61000-4-4;IEC 61000-4-5;IEC 61000-4-2
Current(Ir)
20nA
Voltage(VBR)
8.5V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ESD5425E-6/TR 产品概述

一 产品简介

ESD5425E-6/TR 是 WILLSEMI(韦尔)推出的一款四路单向 TVS 二极管保护器件,采用 SOT-23-6L 封装,专为高速接口与信号线提供瞬态过压保护。器件针对 5V 工作电压系统优化,集成四路保护单元,适合 USB、数传线、控制总线等多路 5V 信号线的防护需求。

二 主要规格

  • 类型:单向 TVS,四路(四通道)
  • 标称反向工作电压 Vrwm:5V
  • 击穿电压 Vbr:约 8.5V
  • 峰值钳位电压 Vc:11.8V(在 Ipp = 25A,8/20µs 浪涌条件下)
  • 峰值脉冲电流 Ipp:25A(8/20µs)
  • 反向漏电流 Ir:20nA(典型/最大值于 Vrwm 条件)
  • 结电容 Cj:约 3pF(适合高速信号,低负载效应)
  • 防护等级:满足 IEC 61000-4-2(ESD)、IEC 61000-4-4(EFT)、IEC 61000-4-5(浪涌)
  • 封装:SOT-23-6L
  • 型号:ESD5425E-6/TR(品牌:WILLSEMI / 韦尔)

三 电气特性解析

器件在 5V 反向工作电压下漏电极微,Ir 约 20nA,有利于低功耗系统与电池供电设备。3pF 的结电容对高速差分或单端信号影响小,可用于保持信号完整性。击穿电压约 8.5V,钳位电压 11.8V(Ipp=25A)能在强冲击时将瞬态电压钳位至安全范围,从而保护下游器件不被高压脉冲破坏。

四 典型应用场景

  • USB(包括 USB2.0/其它 5V 接口)和 OTG 接口保护
  • 串行总线与控制线(I2C、SPI、UART)防静电与浪涌保护(注意单向特性)
  • 消费电子前端(智能手机配件、平板、摄像头模组)
  • 工业控制与通信端口的 EMI/浪涌缓解

五 封装与 PCB 布局建议

SOT-23-6L 小型封装便于节省空间。建议将器件靠近受保护的外接器或接口布局,尽量缩短受保护线到器件 GND 的走线,并采用单点或短距离接地回路,必要时增加多孔接地以提高泄放能力。避免信号线在器件附近形成环路,确保焊盘与过孔的热量管理,以便在高能量脉冲下器件可靠工作。

六 选型与注意事项

  • 单向 TVS 设计适用于有明确参考地且信号不会出现双向大幅度负电平的场景;若需双向保护请选用双向器件。
  • 验证工作电压与被保护总线的最大偏置电压,确保 Vrwm=5V 满足系统要求。
  • 高速差分信号应关注结电容(3pF)对带宽与时序的潜在影响。
  • 对于较高能量或更严格的浪涌要求,可并联合适的阻抗元件或选择更高 Ipp 等级的器件。

七 总结

ESD5425E-6/TR 以其四路集成、低漏电、小结电容以及对 IEC 标准的良好兼容性,适合用于各类 5V 信号接口的瞬态过压保护。小封装与多路集成设计,有助于在有限 PCB 空间内实现高效、可靠的前端防护,是消费电子、通信与工业控制等领域常见的防护解决方案。

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