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WILLSEMI WNM4153-3/TR WNM4153
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- WILLSEMI WNM4153-3 / TR
- Type
- WILLSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- WILLSEMI
- Electronic Component
- WNM4153-3/TR
- Electronic Component
- 1
- Package
- SOT-523
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.031g
- Electronic Component
- 1
- Electronic Component
- BM69417209
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 370mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
WNM4153-3/TR 产品概述
一、产品基本信息
- 产品名称：WNM4153-3/TR
- 类型：N沟道场效应管 (MOSFET)
- 功率：300mW
- 电压：20V
- 电流：800mA
- 封装：SOT-523
- 品牌：WILLSEMI（韦尔）
二、产品特性
WNM4153-3/TR是一款高性能的N沟道场效应管（MOSFET），适用于多种电子电路中的开关和放大应用。它具有以下几个显著特点：
低导通电阻：WNM4153-3/TR设计以实现较低的导通电阻（RDS(on)），因此在传导电流时可以显著降低功耗，减小功率损耗。这一点尤其重要，适用于便携式设备和其他热敏感应用。
高开关速度：该MOSFET具有良好的开关特性，能够快速响应，从而提高电路效率。这使得WNM4153-3/TR成为高频开关电源、DC-DC转换器及其它需要快速开关的电路的理想选择。
适用的电压与电流范围：其能够承受的最高电压为20V，最大电流为800mA，适合多种应用场景，包括低压和中等功率的驱动需求。
小巧轻便的封装：采用SOT-523封装，这种表面贴装器件满足了现代电子产品对小型化和轻量化的需求，是高密度电路板设计的优选。
三、应用领域
由于其优异的性能，WNM4153-3/TR在多个领域均有广泛应用，具体包括：
消费电子：适用于智能手机、平板电脑、笔记本电脑等便携式电子设备中的电源管理电路及驱动电路。
电源管理：在各类电源适配器、UPS及电池管理系统中应用，作为开关元件以提高电源效率。
LED驱动：在LED照明及指示灯等应用中，用于驱动LED以实现高效能和长寿命的照明解决方案。
工业设备：在自动化设备及其他工业控制器件中，作为开关元件控制小型电机或负载。
汽车电子：高频开关电源、信号放大及控制电路中的应用，能够承受特定的环境条件。
四、典型特性参数
- 漏极到源极电压（VDS）：最大20V
- 漏极电流（ID）：最大800mA
- 功率耗散（PD）：最大300mW
- 导通电阻（RDS(on)）：在特定的栅极电压下，表现出极低的RDS(on)值，提高了效率。
五、优势总结
WNM4153-3/TR作为一款N沟道MOSFET，凭借其低导通电阻、高开关速度、适合的电压和电流范围，及小巧的封装设计，实现了性能与设计灵活性的良好平衡。无论是在新兴的消费电子领域还是传统的工业应用中，WILLSEMI为客户提供了高可靠性及高性价比的选择。
随着电子设备对能效和小型化需求的不断增加，WNM4153-3/TR将会在现代电子设计中发挥愈加重要的作用。对于工程师来说，它是实现创新设计与提升产品性能的理想组件之一。
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