WMSIC Electronic Components

WILLSEMI ESD63011N-2/TR ESD63011N

ModelESD63011N-2/TR
PackageDFN1006-2L
BrandWILLSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WILLSEMI ESD63011N-2 / TR
Type
WILLSEMI
Minimum package
10000

Technical parameters

Electronic Component
WILLSEMI
Electronic Component
ESD63011N-2/TR
Electronic Component
1
Package
DFN1006-2L
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.009g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
0.6pF
Electronic Component
BM0228739676
Voltage
10.5V
Electronic Component
IEC 61000-4-5;IEC 61000-4-2
Current(Ir)
500nA
Voltage(VBR)
9V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ESD63011N-2/TR 产品概述

一、产品简介

ESD63011N-2/TR 是 WILLSEMI(韦尔)推出的一款单路双向低容抗静电二极管,专为高速信号线和接口保护设计。器件在小型 DFN1006-2L 封装中集成,具有低结电容、低漏电及对 IEC 等级的抗静电与浪涌能力,适合现代移动、通信与消费类电子产品对接口防护的小体积、高性能需求。

二、主要参数

  • 钳位电压(Vc):10.5 V(典型)
  • 击穿电压(Vbr):9 V(典型)
  • 反向截止电压(Vrwm):5 V
  • 峰值脉冲电流(Ipp):6 A(8/20 μs 波形)
  • 反向电流(Ir):500 nA(通常条件)
  • 结电容(Cj):0.6 pF(典型)
  • 通道数:单路;极性:双向
  • 防护等级:满足 IEC 61000-4-5(浪涌)和 IEC 61000-4-2(静电放电)标准

三、典型特性与优势

  • 低结电容(0.6 pF)对高速信号影响小,适合 USB、HDMI、SATA 等高速数据线保护。
  • 双向结构可直接保护差分对或双向信号,无需方向判断或额外电路。
  • 峰值6 A(8/20 μs)浪涌能力,配合合理 PCB 布局能有效吸收短时高能脉冲。
  • 低漏电(500 nA)适用于低功耗与电池供电系统,减少静态功耗。

四、应用场景与封装

  • USB/USB-C、移动设备 I/O、数据总线、串行接口、音视频接口等高速或敏感信号线防护。
  • 小型 DFN1006-2L 封装便于在紧凑 PCB 布局中靠近连接器布置,节省空间并降低寄生电感。

五、布局与使用建议

  • 器件应尽量靠近被保护的接口或器件布置,信号线到器件的走线尽量短且宽,减少寄生阻抗。
  • 为提高浪涌吸收效果,确保器件接地良好,必要时在地平面开口处优化焊盘和过孔布局。
  • 在高频或差分信号应用中,注意匹配阻抗与最小化走线长度,利用其低 Cj 优势以减小信号失真。

ESD63011N-2/TR 提供在体积受限场合下对高速信号的高效静电与浪涌防护,是对接口可靠性要求较高设计的理想选择。

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