WMSIC Electronic Components

WILLSEMI WNM2020-3/TR WNM2020

ModelWNM2020-3/TR
PackageSOT-23
BrandWILLSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WILLSEMI WNM2020-3 / TR
Type
WILLSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
WILLSEMI
Electronic Component
WNM2020-3/TR
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.035g
Electronic Component
1
Electronic Component
BM69417194
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
380mW
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

WNM2020-3/TR 产品概述

一、产品概述

WNM2020-3/TR是一种高性能的N沟道场效应管(MOSFET),主要用于各种电子电路中,特别是电源管理、开关电路和负载驱动应用。其额定功率为320mW,支持最高20V的工作电压和830mA的最大漏电流,具备优异的开关性能和可靠性。该器件采用SOT-23封装,适合于空间要求苛刻的应用场合,广泛应用于消费电子、工业控制和通信设备等领域。

二、技术特点

  1. N沟道配置:

    • N沟道MOSFET通常具有较低的导通电阻,相比于P沟道MOSFET,在相同的封装和参数下,能够承载更高的电流,具有更高的效率。
  2. 功率与电压范围:

    • WNM2020-3/TR的最大功率为320mW,工作电压范围为0V至20V(VDS),适合大多数中低功率应用,尤其是在便携式设备和小型电源电路中。
  3. 漏电流:

    • 最大漏电流额定值为838mA(通常为830mA),这意味着在大多数电流级别的应用中,WNM2020-3/TR器件能够提供稳定的性能。
  4. 结构与封装:

    • 该器件采用SOT-23封装,具有小尺寸、轻量化和出色的热性能,适合自动贴片装配(SMT),简化了生产工艺。
  5. 开关特性:

    • WNM2020-3/TR具备快速开关特性,适合高频操作,并能有效降低开关损耗,提高系统的整体效率。

三、应用场合

WNM2020-3/TR被广泛应用于多个领域,具体应用场景如下:

  1. 开关电源:

    • 在DC-DC转换器中,以其较低的导通电阻和优良的开关特性,WNM2020-3/TR可用于提高能量转换效率。
  2. 电机驱动:

    • 用于电动机控制和驱动电路,WNM2020-3/TR可以实现高效的功率开关,减少能量损失。
  3. 信号开关:

    • 应用于信号切换电路,能够在较低功耗下完成信号的传输和切换,适合需要高频操作的应用。
  4. 消费电子:

    • 在便携式设备如智能手机、平板电脑和便携式音响等领域,WNM2020-3/TR可以用于电池供电的负载切换,提供优良的电源管理。
  5. 汽车电子:

    • 在车载电子设备中,能够支持智能控制和负载控制,帮助实现汽车的功率管理。

四、应用注意事项

  • 散热:在设计应用电路时,注意器件的散热,特别是在长时间大电流工作情况下,应考虑增加散热措施。
  • 过流保护:需要在电路中加入适当的保护措施,以避免在过载条件下损坏器件。
  • ESD保护:为避免静电放电对器件性能产生影响,建议设计中加入ESD保护元件。

五、总结

WNM2020-3/TR是一款性能优越的N沟道MOSFET,适用于各种中低功率应用。它凭借320mW的功率和830mA的漏电流,为设计师提供了高效、可靠的解决方案。无论是在电源管理、电机驱动还是消费电子设备中,WNM2020-3/TR都展现出了卓越的性能,是电子设计工程师的理想选择。随着电子产品向越来越高的效率和更小的尺寸发展,WNM2020-3/TR将为未来的应用提供可靠的支持。

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