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WILLSEMI WPM2015-3/TR WPM2015
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- WILLSEMI WPM2015-3 / TR
- Type
- WILLSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- WILLSEMI
- Electronic Component
- WPM2015-3/TR
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.039g
- Electronic Component
- 1
- Electronic Component
- BM69416680
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 900mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
WPM2015-3/TR 产品概述
1. 产品简介
WPM2015-3/TR 是一款高性能的 P 沟道场效应管（MOSFET），其设计旨在满足广泛的电子应用需求。该元器件的额定功率为 800mW，最大漏极源电压为 20V，最大漏极电流为 2.2A，采用 SOT-23 封装。这种封装形式不仅有助于简化电路设计，还在一定程度上节省了板上的空间，适合高密度的电子产品设计。
2. 技术规格
- 元件类型：P 沟道 MOSFET
- 功率额定：800mW
- 漏极源电压 (VDS)：20V
- 漏极电流 (ID)：2.2A
- 封装类型：SOT-23
- 制造商：WILLSEMI (韦尔)
WPM2015-3/TR 的 P 沟道结构使其在控制电流的方向上更加灵活，尤其适用于低侧开关和电源管理应用。此外，P 沟道 MOSFET 在关断时能够保持较低的漏电流，这对于降低能源消耗至关重要。
3. 应用领域
WPM2015-3/TR 主要应用于以下几个领域：
- 电源管理：该 MOSFET 在开关电源、DC-DC 转换器等电源管理电路中十分常见，能够有效地管理电压转换，提高能效。
- 负载开关：在各种负载开关电路中，WPM2015-3/TR 能够提供稳定的开关控制，适用于马达驱动、电池管理和LED灯具。
- 通信设备：由于其较高的电流承载能力和较低的导通阻抗，适合于通信领域中的信号开关和处理。
- 便携式设备：在移动电子产品中，由于其小巧的 SOT-23 封装，WPM2015-3/TR 为多种功能模块提供了理想的开关解决方案。
4. 性能特点
- 高效率：WPM2015-3/TR 的设计确保了低导通电阻，从而在开关操作中实现较低的功耗和热量产生。
- 小体积：SOT-23 封装体积小，便于高密度布线，适合现代便携式电子产品。
- 优良的热管理性能：尽管功率相对较低，但合理的散热设计可以确保其在高负载条件下工作的稳定性。
- 简便的驱动电路：与传统的 BJT 相比，该 MOSFET 具有更低的栅极驱动电流需求，从而减轻了后端驱动电路的负担。
5. 结论
WPM2015-3/TR 是一款集成了高效能与小型设计的 P 沟道 MOSFET，适用于广泛的应用场景，包括电源管理、负载开关及便携式设备等。由于其高效能、低功耗及良好的热管理特性，使其在众多电子产品中成为一个理想的选择。WILLSEMI 作为知名品牌，为用户提供了可靠的产品质量和技术支持，使得 WPM2015-3/TR 成为市场上受欢迎的解决方案之一。对于设计工程师而言，选择 WPM2015-3/TR 将有助于实现高效能的电路设计方案，推动产品的性能提升与市场竞争力。
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