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WILLSEMI WPM2092-3/TR WPM2092
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- WILLSEMI WPM2092-3 / TR
- Type
- WILLSEMI
- Minimum package
- 10000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- WILLSEMI
- Electronic Component
- WPM2092-3/TR
- Electronic Component
- 1
- Package
- DFN-3L(1x0.6)
- Electronic Component
- 1 P
- Electronic Component
- MOSFET
- Electronic Component
- 0.011g
- Electronic Component
- 1
- Electronic Component
- BM0227089743
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 320mW
- Electronic Component
- Electronic Component
- Electronic Component
- 10000
- Voltage(Vdss)
- 20V
- Gate (Qg)
- [email protected]
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
WPM2092-3/TR 产品概述
一、产品简介
WPM2092-3/TR 是 WILLSEMI（韦尔）推出的一款 P 沟道场效应晶体管（P‑FET），封装为 DFN-3L (1.0 × 0.6 mm)。器件针对低压、空间受限的便携及电源管理应用优化，工作温度范围宽 (-55 ℃ ~ +150 ℃)，适合工业级与消费电子混合场景。
二、关键参数
- 类型：P 沟道 MOSFET（单片，1 个 P 沟道）
- 漏源耐压 Vdss：20 V
- 阈值电压 Vgs(th)：0.45 V（典型）——接近逻辑电平
- 栅极电荷 Qg：1.1 nC @ 4.5 V（低门极负荷，有利于快速切换与低驱动能耗）
- 连续漏极电流 Id：740 mA（理想散热条件下）
- 功耗 Pd：320 mW（封装限制，需注意热设计）
- 反向传输电容 Crss：19 pF @ 15 V（影响米勒效应与开关过渡）
- 封装：DFN-3L (1 × 0.6 mm)
三、主要特性与优势
- 低阈值（0.45 V）与低栅极电荷（1.1 nC）使其在 3.3 V / 4.2 V 等低压系统中易于驱动，适合作为高侧负载开关或电源路径开关。
- 紧凑 DFN 封装有利于高密度 PCB 设计与空间受限设备。
- 宽温度范围满足工业级可靠性要求。
- 较小的 Crss 表明在切换过程中米勒区影响可控，有利于减小开关损耗与 EMI（需配合驱动策略优化）。
四、典型应用场景
- 电池供电系统的高侧断开/负载开关（移动终端、可穿戴）
- 电源路径管理与倒灌保护（充电器、USB/PD 子系统）
- 电源管理 IC（PMIC）外围开关与功率路由
- 小电流驱动与信号切换场合
五、使用建议与热管理
- 由于 Pd 标称仅 320 mW，实际可用电流受 PCB 散热条件影响显著，建议在布局时加大铜箔面积或自身焊盘铜箔以降低结温。
- 阈值极低，器件对门极电压变化敏感，须保证门极在预期工作点被可靠拉到全导通或全关断，避免半导通增加功耗。
- 尽管 Qg 小，开关速度仍受 Crss 与驱动阻抗影响，若用于频繁切换场合，请评估开关损耗与 EMI。
- 选用前建议获取或测量 Rds(on)、最大 Vgs 等完整电气特性，以确保符合系统容差；在无完整数据时对额定电流采取保守降额设计。
六、封装与焊接注意
DFN-3L (1×0.6 mm) 体积小，焊接工艺需控制回流温度曲线与焊盘设计，避免虚焊或过热导致可靠性问题。考虑到热传导有限，底部焊盘应设计为通孔或大面积散热铜箔以改善散热。
总结：WPM2092-3/TR 适合低压、低功耗、高密度电源路径控制应用。其低阈值与低栅极电荷是显著优势，但需重视封装热限与电流降额，配合合适的 PCB 散热与门极驱动方案即可发挥最佳性能。
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