WMSIC Electronic Components

WILLSEMI WNM2024-3/TR WNM2024

ModelWNM2024-3/TR
PackageSOT-23
BrandWILLSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WILLSEMI WNM2024-3 / TR
Type
WILLSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
WILLSEMI
Electronic Component
WNM2024-3/TR
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.031g
Electronic Component
1
Electronic Component
BM0257641539
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
800mW
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:WNM2024-3/TR N沟道场效应管

一、基本介绍

WNM2024-3/TR是一款由WILLSEMI(韦尔)生产的高性能N沟道场效应管(MOSFET),其最大功率为600mW,适用于20V的操作环境,最大电流可达3.3A。该器件采用SOT-23小型封装,适合于现代电子电路中的空间受限应用,提供了高效的开关性能和优秀的热管理能力。

二、主要特性

  1. 高效能电流控制:WNM2024-3/TR的最大电流为3.3A,使其能够在较高负载条件下稳定工作,非常适合用于开关电源、马达驱动和电机控制等应用场景。
  2. 宽电压范围:器件的最大工作电压为20V,适合用于多种低至中等电压的应用,满足市场上广泛的电源需求。
  3. 小型封装:SOT-23封装体积小巧,便于PCB布局,适合各种便携式设备和空间有限的电路设计。
  4. 低导通电阻:该MOSFET具有较低的导通电阻(Rds(on)),在工作时可以减少功耗和发热,提高系统效率。
  5. 快速开关特性:高开关速度使其在频繁切换的应用中表现优越,提升整体系统的效率和响应能力。

三、应用领域

WNM2024-3/TR N沟道MOSFET广泛应用于多种领域,包括但不限于:

  • 开关电源(SMPS):在电源转换过程中,MOSFET可以高效控制电流,提升电源的稳定性和效率。
  • 电机控制:此器件可用于电机驱动电路,提供精准的控制信号,适合各类小功率电机。
  • 线性调节器:作为线性调节器中的关键组件,该MOSFET可以用于调节输出电压,提高系统的可靠性。
  • LED驱动:能够用于LED照明和显示屏驱动电路,确保稳定且高效的电流供应。
  • 消费电子产品:在数码相机、音响设备和智能家居产品等项目中,大量使用MOSFET来实现高效能其输出和控制。

四、性能参数

  • 功率耗散: 600mW
  • 工作电压: 20V
  • 最大电流: 3.3A
  • 封装类型: SOT-23
  • 类型: N沟道

五、设计注意事项

在使用WNM2024-3/TR时,需要注意以下几个方面:

  • 散热管理:尽管该MOSFET具有一定的功率承载能力,但在高负荷或连续工作的情况下,仍需考虑其散热设计,以避免过热影响器件性能。
  • 布局优化:由于其小型化特性,PCB上的布局需合理规划,以确保电流路径最短,减少电磁干扰(EMI)和提升整体电路的稳定性。
  • 适当驱动电压:确保MOSFET的栅极驱动电压符合规范,以便获得最佳的开关性能和导通状态。

六、总结

WNM2024-3/TR N沟道场效应管以其出色的性能参数和广泛的应用范围,使其成为现代电子电路中的重要元件。其高效能、低导通电阻以及快速开关特性,满足了市场对高性能电子元器件的需求,是各类应用中不可或缺的选择。在电源管理、马达控制和各类消费电子产品中,WNM2024-3/TR都将展现出显著的应用优势。

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