WMSIC Electronic Components

WILLSEMI ESD5401N-2/TR ESD5401N

ModelESD5401N-2/TR
PackageDFN1006-2L
BrandWILLSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WILLSEMI ESD5401N-2 / TR
Type
WILLSEMI
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
WILLSEMI
Electronic Component
ESD5401N-2/TR
Electronic Component
1
Package
DFN1006-2L
Electronic Component
Electronic Component
Type
TVS
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.01g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
42pF
Electronic Component
BM0225374837
Operating Temperature
40℃~+85℃
Voltage
45V
Electronic Component
IEC 61000-4-5;IEC 61000-4-2

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ESD5401N-2/TR 产品概述

一、产品简介

ESD5401N-2/TR 是 WILLSEMI(韦尔)推出的一款单路、单向瞬态电压抑制器(TVS),专为 24V 等级电源和信号线的静电放电(ESD)与雷击脉冲保护设计。器件采用小型 DFN1006-2L 封装,工作温度范围 -40℃ ~ +85℃,兼顾高能脉冲耐受与低漏电、低电容特性,适合对电磁兼容有较高要求的应用场合。

二、主要参数

  • 钳位电压(Vc):45 V
  • 工作温度:-40℃ ~ +85℃
  • 击穿电压(Vbr):29 V
  • 反向截止电压(Vrwm):24 V
  • 峰值脉冲功率(Ppp):360 W @ 8/20 µs
  • 峰值脉冲电流(Ipp):8 A @ 8/20 µs
  • 反向电流(Ir):1 nA(典型)
  • 结电容(Cj):42 pF
  • 通道数:单路;极性:单向
  • 防护等级:符合 IEC 61000-4-5(雷击脉冲)与 IEC 61000-4-2(静电放电)

三、性能亮点

  • 高能量吸收能力:360 W(8/20µs)峰值脉冲功率,能有效钳制雷击及浪涌能量,保护后端电路免受破坏。
  • 低钳位电压:45 V 钳位电压在大幅限制瞬态电压峰值的同时,兼顾对电路的保护。
  • 超低漏电与适中电容:1 nA 的低反向电流减少静态功耗,42 pF 的结电容适配多数高速信号线,降低信号畸变。
  • 小尺寸封装:DFN1006-2L 提供小占位、低寄生电感,便于在有限板面空间内实现有效保护。

四、典型应用场景

  • 24V 及以下电源总线过压与浪涌防护(工业控制、楼宇自动化、安防设备)。
  • I/O 接口与数据线(串口、以太网 PHY 辅助保护,需评估电容影响)。
  • 通信基站、电源模块、仪器仪表等需要满足 IEC 雷击与 ESD 规范的场合。
    (注:器件工作温度上限为 +85℃,在高温或车规严苛环境应评估使用条件。)

五、封装与应用建议

  • 尽量将器件放置于被保护端口与 PCB 接口(如连接器)之间,靠近受保护节点以减小寄生感抗与回路面积。
  • 保持与地(或参考地)之间的短且宽的走线,确保大电流脉冲回流路径低阻抗。
  • 对于高速信号,需评估 42 pF 电容对信号完整性的影响;敏感线路可采用差分或额外滤波配合设计。
  • 焊接遵循厂商建议的回流温度曲线与存储、湿敏等级说明,保证可靠性。

六、合规与可靠性

ESD5401N-2/TR 满足 IEC 61000-4-2 与 IEC 61000-4-5 要求,经过设计用于抗击工业环境中常见的静电与雷击瞬态。常规应用下,按推荐 PCB 布局与热管理措施可获得长期稳定的防护性能。

如需进一步的封装尺寸、典型电路、测试曲线或 PCB 推荐焊盘,请参考 WILLSEMI 的产品数据手册或联系供应商获取样片与支持。

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