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WILLSEMI WNM2030A-3/TR WNM2030A
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- WILLSEMI WNM2030A-3 / TR
- Type
- WILLSEMI
- Minimum package
- 8000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- WILLSEMI
- Electronic Component
- WNM2030A-3/TR
- Electronic Component
- 1
- Package
- SOT-723
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.016g
- Electronic Component
- 1
- Electronic Component
- BM0227584882
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 690mW
- Electronic Component
- Electronic Component
- Electronic Component
- 8000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
WNM2030A-3/TR 产品概述
WNM2030A-3/TR 是 WILLSEMI（韦尔）推出的一款小封装 N 沟场效应晶体管，封装为 SOT-723。器件面向低电压开关与功率控制应用，具有宽工作温度范围与小体积优点，适合便携设备与板上开关场合。
一、主要电气参数与特点
- 漏源电压（Vdss）：20 V，适合 12V 及以下系统开关。
- 导通电阻（RDS(on)）：1.4 Ω @ Vgs=1.8 V，低门压驱动下仍能导通。
- 连续漏极电流（Id）：900 mA（需参考封装与散热条件）。
- 功耗（Pd）：690 mW（注意实际应用中受 PCB 散热影响较大）。
- 阈值电压（Vgs(th)）：1.0 V @ ID=250 μA，利于低压逻辑级驱动。
- 门极电荷（Qg）：420 pC @ 4.5 V，表明开关转换时需要较大驱动能量，适合低频或静态开关。
- 寄生电容：Ciss≈29 pF@10 V、Coss≈11 pF、Crss≈4 pF，有利于开关稳定性与电磁兼容设计。
- 工作温度：-55 ℃ 至 +150 ℃，适用于宽温度范围环境。
二、应用场景与适用建议
- 作为低压负载开关、通断控制或电源管理中小电流开关元件。
- 适用于便携式设备、传感器节点、背光/LED 驱动的小电流开关、电池保护电路等。
- 由于 Qg 较大，不推荐在高频高效率的同步开关电源中作为主开关器件，更适合直流开关或低频 PWM。
三、驱动与布局注意事项
- 门极驱动：尽量采用稳定可靠的驱动源，若由 MCU 直接驱动需确认 MCU 能够提供足够能量或在低频场合可接受较慢上升/下降沿；必要时串联小阻抗（10–100 Ω）减少振铃。
- PCB 布局：SOT-723 封装自带散热限制，确保器件附近有足够的铜箔散热，并缩短电流回路，减小寄生电感。
- 门极闲置时加上上/下拉电阻防止栅极悬空引起误导通。
- 在开关瞬态处加入 TVS 或 RC 缓冲抑制尖峰，避免超过 Vdss 和产生击穿。
四、热性能与可靠性提示
- 标称 Pd 为 690 mW，但实际功耗由 PCB 散热条件决定；在高环境温度和小铜面积下需降额使用。
- 在高温（接近 150 ℃）环境中长期工作时，应评估器件参数漂移和 RDS(on) 上升对系统效率的影响。
- 若存在反向瞬态或能量回收情况，需验证器件的能量吸收能力与单脉冲安全工作区（SOA）。
五、封装与选购信息
- 品牌：WILLSEMI（韦尔）。
- 封装：SOT-723（超小型封装，适合高密度 PCB 布局）。
- 型号：WNM2030A-3/TR（整卷贴装型号用于 SMT 生产）。
- 选型时请结合实际电流、频率、散热条件与 PCB 设计，若需要更低 RDS(on) 或高频性能，建议选用规格更高的器件。
如需详细的管脚图、绝对最大额定值以及温度特性曲线，请提供是否需要 Datasheet，我可为您进一步核对并给出参考电路与布局示意。
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