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WILLSEMI WPM2019-3/TR WPM2019
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- WILLSEMI WPM2019-3 / TR
- Type
- WILLSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- WILLSEMI
- Electronic Component
- WPM2019-3/TR
- Electronic Component
- 1
- Package
- SOT-523
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.024g
- Electronic Component
- 1
- Electronic Component
- BM69418282
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 380mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
WPM2019-3/TR 产品概述
产品简介
WPM2019-3/TR 是由韦尔半导体（WILLSEMI）推出的一款高性能 P沟道场效应管（MOSFET），具有220mW的功率处理能力、20V的额定电压以及550mA的额定电流。这款产品采用 SOT-523-3 封装，适合对空间要求严格的电子应用。在现代电子设备中，MOSFET因其优良的开关速度、低导通电阻及良好的热稳定性而被广泛应用于各种电路设计中。
关键特性
高效能：WPM2019-3/TR 在220mW功率范围内提供优秀的电流控制，使其适用于多种负载条件，尤其是在低功耗设备中。
电压和电流规格：该MOSFET 的最大漏源电压为20V，支持550mA的通过电流，能够满足多数中小型负载的需求。这使得WPM2019-3/TR非常适合用于电池供电的便携式电子设备中。
小型化设计：SOT-523-3封装体积小，便于在空间有限的电路板上布局，为设计师提供了更大的灵活性，特别是在智能手机、可穿戴设备和物联网设备的设计中。
P沟道特点：符合对P型 MOSFET 的需求，在电源管理和开关应用中表现出色，能够有效降低电源损耗，提高系统能效，减小热量产生。
应用领域
WPM2019-3/TR 在多个领域中有着广泛的应用，包括但不限于：
便携式设备：如智能手机、平板电脑以及便携式游戏机等小型电子产品，通常需要高效能和小型封装的MOSFET来进行电源管理和信号开关。
电池管理系统：在电池充电和放电过程中，WPM2019-3/TR可以用于高效控制应用，保证电池在安全和高效的状态下工作，延长电池寿命并提高整个系统的性能。
LED驱动电路：该MOSFET能够用作LED灯具中的开关元件，提供响应快速、耗能低的驱动解决方案。
家用电器：在现代家电产品中，MOSFET被广泛用于电源供应和控制电路中，确保高效能和稳定性。
性能参数
WPM2019-3/TR 的一些重要电气特性包括：
- 最大漏源电压（V_DS）：20V
- 最大漏极电流（I_D）：550mA
- 功耗：最多220mW
- 封装类型：SOT-523-3
- 工作温度范围：根据数据手册，WPM2019-3/TR 在较宽的温度范围内均能正常工作，适应各种环境条件。
结论
作为一款高性价比的P沟道MOSFET，WPM2019-3/TR 是电子设计师在开发低功耗、高效能电子产品时的理想选择。其小型的SOT-523-3封装、良好的电气性能以及高功率处理能力，使得该MOSFET能够适应现代电子设备的严苛要求。无论是在便携式设备、家用电器还是复杂的电源管理系统中，WPM2019-3/TR 都将发挥其独特的价值，助力设计师实现卓越的产品性能和可靠性。
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