WMSIC Electronic Components

WILLSEMI ESD56301D05-2/TR ESD56301D05

ModelESD56301D05-2/TR
PackageDFN1610-2L
BrandWILLSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WILLSEMI ESD56301D05-2 / TR
Type
WILLSEMI
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
WILLSEMI
Electronic Component
ESD56301D05-2/TR
Electronic Component
1
Package
DFN1610-2L
Electronic Component
Electronic Component
Type
TVS
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.014g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
600pF
Electronic Component
BM0227309668
Voltage
9.5V
Electronic Component
IEC 61000-4-5;IEC 61000-4-2
Current(Ir)
1uA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ESD56301D05-2/TR 产品概述

一、产品简介

ESD56301D05-2/TR 是 WILLSEMI(韦尔)推出的一款单路、单向 TVS(瞬态电压抑制)二极管,封装为 DFN1610-2L。器件用于对单路信号或电源线抗静电放电(ESD)与浪涌(Surge)保护,适配工业与消费类电子的过压瞬态防护需求。

二、主要特性

  • 单路、单向 TVS 结构,便于对有方向性保护的线路布置。
  • 钳位电压(VCL):9.5 V(典型)。
  • 击穿电压(Vbr):6 V,反向工作电压 Vrwm:5 V。
  • 峰值脉冲电流 Ipp:170 A(8/20 μs)。
  • 结电容 Cj:600 pF(较大的电容值会对高速信号有影响,应考虑信号完整性)。
  • 反向漏电流 Ir:1 μA(典型,静态功耗低)。
  • 防护等级符合 IEC 61000-4-2(ESD)与 IEC 61000-4-5(浪涌)要求。

三、电气参数(主要项)

  • 类型:TVS(瞬态电压抑制器)。
  • 极性:单向(针对正向脉冲提供钳位)。
  • 通道数:单路。
  • 封装:DFN1610-2L,适合贴片工艺与空间受限电路板。

四、应用场景

  • USB、音视频、低速数据线或电源线的瞬态抑制(根据电容特性优先用于低速或电源保护)。
  • 工业控制、家电接口与消费电子外部接口的ESD/Surge防护。
  • 需通过 IEC 61000-4-2/4-5 测试的系统接口保护点。

五、封装与布局建议

  • 推荐将器件靠近受保护的连接器或接口放置,尽量缩短信号/电源走线长度以降低寄生感抗。
  • 采用良好地平面连接(单点或短回路),确保浪涌能量有效导入接地系统。
  • 注意 DFN1610-2L 的焊盘设计与回流温度限制,遵循厂商回流焊工艺指南。

六、使用注意事项

  • 结电容 600 pF 较大,可能影响高速差分线路(如 USB3.0、LVDS 等),不建议直接用于高速差分信号的终端保护。
  • 在选型时根据工作电压与允许泄漏电流确认 Vrwm 与 Ir 是否符合系统需求。
  • 对于需要更高浪涌承受能力或更低电容的场合,应考虑并行或替代器件。

本概述基于器件主要参数与应用实践给出关键要点,实际设计请参考完整数据手册与厂商应用说明以完成布板与可靠性验证。

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