WMSIC Electronic Components

WILLSEMI WS72324Q-16/TR WS72324Q

ModelWS72324Q-16/TR
PackageQFN3x3-16
BrandWILLSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WILLSEMI WS72324Q-16 / TR
Type
WILLSEMI
Minimum package
3000 编带

Technical parameters

Electronic Component
Electronic Component
Electronic Component
WILLSEMI
Electronic Component
WS72324Q-16/TR
Electronic Component
1
Package
QFN3x3-16
Electronic Component
Operational Amplifier
Electronic Component
0.072g
Electronic Component
1
Electronic Component
Output
Electronic Component
BM0230826904
Operating Temperature
40℃~+125℃
Amplifier
4
Output Current
43mA
(SR)
1.1V/us
Power Supply Voltage
1.8V~5.5V
Static Current(Iq)
42uA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

WS72324Q-16/TR 产品概述

一、产品简介

WS72324Q-16/TR 是 WILLSEMI(韦尔)推出的一款四路高性能运算放大器,针对便携设备、工业传感与精密测量等场景优化设计。器件支持宽电源电压范围并具备轨到轨输入与轨到轨输出能力,适合在低电压单电源系统中实现最大动态范围与高精度信号处理。

二、主要特点

  • 四路放大器,单芯片实现多通道信号处理。
  • 单电源工作电压 1.8V ~ 5.5V(Vdd-Vss 最大 5.5V)。
  • 输入/输出轨到轨,最大化动态摆幅,便于 1.8V 电源系统设计。
  • 增益带宽积(GBP)1.5MHz,压摆率(SR)1.1V/µs,适合低频至中频信号放大与滤波。
  • 典型输入失调电压 3mV,失调温漂 1µV/℃,优异的直流精度。
  • 极低输入偏置/失调电流:Ib ≈ 1pA,Ios ≈ 1pA,适合高阻抗传感器接口。
  • 噪声密度 23nV/√Hz @10kHz,满足多数精密模拟前端噪声要求。
  • 共模抑制比(CMRR)101dB,差模干扰抑制能力强。
  • 每通道静态电流(Iq)42µA,单芯片功耗低,适合电池供电设备。
  • 输出驱动能力达 43mA,可驱动中等负载。
  • 工作温度范围 -40℃ 至 +125℃,适合工业环境。
  • 封装:QFN 3x3-16,尺寸紧凑,利于高密度 PCB 布局。

三、电气性能概述

WS72324Q 在直流精度与热漂方面表现突出,3mV 的输入失调配合 1µV/℃ 的温漂,使得在需要长期稳定零点的应用中具有显著优势。1.5MHz 的 GBP 与 1.1V/µs 的压摆率,使器件在低至中频带宽内反应迅速,适合滤波器、缓冲放大与差分放大等常见拓扑。低噪声与极低偏置电流使其在高阻抗源(如电化学传感、光电二极管、热电偶等)前端表现优良。

四、典型应用场景

  • 传感器前端(温度、压力、流量、光学传感等)
  • 便携式医疗与测量仪器
  • 工业控制与数据采集(采样放大、信号调理)
  • 有源滤波器、缓冲器、差分放大器与跨阻放大器
  • 低功耗电池供电系统中的通道密集模拟放大

五、封装与布局建议

QFN3x3-16 封装占板面积小,建议在 PCB 布局时:

  • 在电源引脚附近放置 0.1µF 陶瓷旁路电容,靠近器件供电引脚焊盘布局。
  • 在 QFN 底部焊盘(thermal pad)进行焊接并连接到大面积地平面以改善散热与 EMI。
  • 输入引脚走线尽量短且避免与高速数字线并行,降低干扰。
  • 对于高阻抗输入,采用防静电与防泄漏设计,选用合适保护元件并控制 PCB 表面污染。

六、器件选型与订购信息

型号:WS72324Q-16/TR
品牌:WILLSEMI(韦尔)
封装:QFN3x3-16
环境规格:-40℃ ~ +125℃
适用于需要多通道、低功耗且具备轨到轨能力的模拟前端设计。有关温度系数、典型曲线与应用电路,请参见完整数据手册与评估板资料以获得更详细的设计参考。

如需进一步的参数确认、评估板支持或线路示例,可联系韦尔代理或技术支持获取样片与参考设计。

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