WMSIC Electronic Components

WILLSEMI WPM2093-3/TR WPM2093

ModelWPM2093-3/TR
PackageSOT-723
BrandWILLSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WILLSEMI WPM2093-3 / TR
Type
WILLSEMI
Minimum package
8000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
WILLSEMI
Electronic Component
WPM2093-3/TR
Electronic Component
1
Package
SOT-723
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
Electronic Component
Electronic Component
0.013g
Electronic Component
1
Electronic Component
BM0257651229
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
450mW
Gate Voltage(Vgs)
±10V
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

WPM2093-3/TR 产品概述

一、产品简介

WPM2093-3/TR 是 WILLSEMI(韦尔)推出的一款 P 型绝缘栅场效应管(P‑MOSFET),采用超小型 SOT‑723 封装,面向低压小功率场合的高端开关与电源管理应用。器件耐温范围宽(-55℃ 至 +150℃),适用于工业级与便携设备的严格环境要求。

二、主要特性

  • P 型 MOSFET,高端开关方便做电源路径控制与负载断开
  • 漏源电压 Vdss = 20V,适合常见 5V 及更低电压系统
  • 导通电阻 RDS(on) = 360mΩ(Vgs = 4.5V),在小电流场合有良好导通性能
  • 连续漏极电流 Id ≈ 910mA,适合 1A 量级负载
  • 耗散功率 Pd = 450mW,需要合理 PCB 散热设计
  • 低门极电荷 Qg = 1.1nC(4.5V),切换损耗低,适合电池供电与快切换场合

三、关键电容与驱动特性

  • 输入电容 Ciss = 104pF,输出电容 Coss = 25pF,反向传输电容 Crss = 19pF
  • 阈值电压 Vgs(th) = 1V(Ib=250µA)——易被驱通但需保证足够门源电压摆幅
  • 低 Qg 与中等 Coss 有利于降低驱动能耗和开关损耗,适用于频率不高的开关场景

四、典型应用

  • 便携设备电源开关与电源路径选择(高端开关)
  • 电池管理与负载切换、反向电流阻断
  • USB/Type‑C 电源控制与外设供电开关
  • 低功率 DC‑DC 高端开关与电源保护电路

五、设计与布局建议

  • 作为 P 型高端开关时,源连接到正电源,驱动需将栅极拉低(相对源)以导通;关闭时将栅极拉回源电位。注意 Vgs 极性为负值。
  • 采用适当的栅阻(例如几十欧姆)可以抑制振铃并限制浪涌电流;在高开关频率应用中应评估 Qg 与驱动器能力。
  • SOT‑723 封装热阻较大,建议在 PCB 上为漏极/焊盘留足够铜箔面积以增强散热,并靠近去耦电容布局,缩短高电流回路长度。
  • 对于持续接近额定 Pd 或 Id 的应用,应进行热仿真与降额设计,避免长期高温运行。

六、可靠性与使用注意

  • 器件工作温度范围宽(-55℃~+150℃),适合工业及高温环境使用;但在高温、高功耗条件下需通过 PCB 设计与降额使用来保证长期可靠性。
  • 在含有浪涌或反向瞬态的应用中,应配合合适的瞬态抑制器(TVS)、限流或软启动措施,保护器件不过载。
  • 对于需要更低导通损耗或更高电流的场合,建议评估其他 N 型/更大封装型号以获得更低 RDS(on)。

WPM2093-3/TR 以其小封装、低门极电荷与适中的导通电阻,在 5V 及以下、对尺寸与功耗敏感的高端开关与电源管理场合中具有良好的性价比。请选择合适的器件驱动与 PCB 散热方案以发挥其最佳性能。

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