WMSIC Electronic Components

WILLSEMI WS72552S-8/TR WS72552S

ModelWS72552S-8/TR
PackageSOP-8
BrandWILLSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WILLSEMI WS72552S-8 / TR
Type
WILLSEMI
Minimum package
4000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
WILLSEMI
Electronic Component
WS72552S-8/TR
Electronic Component
1
Package
SOP-8
Electronic Component
Operational Amplifier
Electronic Component
0.134g
Electronic Component
1
Electronic Component
Output
Features
Electronic Component
Electronic Component
BM0231109733
Operating Temperature
40℃~+125℃
Amplifier
2
Output Current
20mA
(SR)
1.2V/us
Power Supply Voltage
2.5V~5V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

WS72552S-8/TR 产品概述

一、产品简介

WS72552S-8/TR 是韦尔(WILLSEMI)推出的一款双路零温漂运算放大器,封装为 SOP-8,面向要求高精度、低漂移与低噪声的测量与信号调理应用。器件具备轨到轨输入与输出特性,能够在宽电源条件下稳定工作,并在低功耗下提供优异的直流准确度,适用于电池供电与工业级长期稳定测量系统。

二、主要性能亮点

  • 双路放大器,型号:WS72552S-8/TR,封装:SOP-8;品牌:WILLSEMI(韦尔)。
  • 零温漂特性:输入失调电压典型值 14 μV,极低的失调漂移(Vos TC)典型 8 nV/℃,有利于长期与温度变化下的高精度直流测量。
  • 轨到轨 I/O:输入与输出均为轨到轨,可最大化信号动态范围,便于低电压单电源系统设计。
  • 低噪声:噪声密度 80 nV/√Hz(@1 kHz),能满足大部分低频精准前端放大要求。
  • 低输入漏电:输入偏置电流 Ib 约 10 pA,输入失调电流 Ios 约 4 pA,适合高阻抗源(电阻、电荷输出传感器等)。
  • 宽工作温度:-40℃ 至 +125℃,适应严苛工业环境。
  • 低功耗:静态电流 Iq 典型 235 μA(器件功耗低,适合电池供电系统)。
  • 输出驱动能力:单路输出电流可达 20 mA,能驱动一般模拟负载或后级缓冲电路。
  • 频率与动态性能:增益带宽积(GBP)1.7 MHz,压摆率(SR)1.2 V/μs,适用于低至中等带宽的精密放大场合。
  • 供电范围:单电源工作 2.5 V 至 5 V;器件最大电源电压(VDD–VSS)可达 9 V(请在规格书中查看绝对最大额定值与推荐工作条件)。

三、典型应用场景

  • 精密传感器信号调理:桥式称重传感器、温度传感器、应变计等需要低漂移、低偏置电流的前端放大。
  • 数据采集与测量仪器:高精度 ADC 前置缓冲、差分放大与低频滤波器。
  • 生物医学与医疗仪器:心电/生物信号放大器,要求极低直流漂移与低噪声。
  • 工业过程控制:长期在线测量、零漂稳定要求高的控制回路。
  • 低功耗便携设备:单电源 2.5–5 V 供电,低静态电流适合电池供电系统。

四、设计与使用建议

  • 电源与去耦:在 VDD 与 VSS 旁放置 0.1 μF 陶瓷去耦电容,靠近管脚,必要时并联 1 μF 以上电解或钽电容以抑制低频纹波。
  • 输入保护与静电:尽量避免将输入悬空或直接接高阻抗噪声源;对于易受静电影响的场合添加适当的输入保护(限流电阻、二极管)。
  • 高阻抗源连接:由于输入偏置电流极低(~10 pA),在高阻抗环境下应注意漏电与 PCB 污染引起的误差,建议采用防污涂层或输入端局部绝缘。
  • 布局注意:差分信号与敏感输入应短线、对称走线;模拟与数字电源分离,避免开关噪声耦入输入。
  • 带宽与反馈设计:GBP 1.7 MHz 和 SR 1.2 V/μs 限制了高增益或高速摆幅场合的响应,设计反馈网络时需兼顾带宽与稳定裕量,避免在过高闭环增益下发生相位裕量不足。

五、示例电路建议

  • 精密电压跟随器:用于 ADC 前端缓冲,利用轨到轨输出充分利用单电源输入范围,降低采样前的源驱动误差。
  • 低频测量放大器:配合 1 kHz 以下滤波器与低通结构,充分利用低噪声与低漂移特点,实现 μV 级别直流测量。
  • 光电二极管跨阻放大器(低速场合):适用于较低带宽的光电检测系统,需要注意 Rf 与反馈电容的选择以匹配 GBP。

六、封装与采购信息

  • 型号:WS72552S-8/TR
  • 品牌:WILLSEMI(韦尔)
  • 封装:SOP-8
  • 工作温度:-40 ℃ ~ +125 ℃
  • 备注:请参阅官方数据手册以获取详细的电气特性曲线、引脚定义、封装尺寸以及可靠性与焊接规范信息。

总结:WS72552S-8/TR 以其极低的输入失调与漂移、轨到轨 I/O、低噪声与低输入偏置电流优势,适合要求长期稳定与高直流精度的测量应用。在设计时结合合适的电源去耦与 PCB 布局,可发挥其在精密信号调理领域的最大效果。

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