WMSIC Electronic Components

WILLSEMI WPM2065A-6/TR WPM2065A

ModelWPM2065A-6/TR
PackageDFN2x2-6L
BrandWILLSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WILLSEMI WPM2065A-6 / TR
Type
WILLSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
WILLSEMI
Electronic Component
WPM2065A-6/TR
Electronic Component
1
Package
DFN2x2-6L
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.035g
Electronic Component
1
Electronic Component
BM0227559840
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
2.8W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

WPM2065A-6/TR 产品概述

一、产品简介

WPM2065A-6/TR 是 WILLSEMI(韦尔)推出的一款 P 通道场效应晶体管(P-MOSFET),封装为 DFN2x2-6L,面向便携电源、电源管理与高侧开关应用。器件工作温度范围宽(-55℃~+150℃),适合严苛环境与高可靠性设计。

二、主要电气参数

  • 漏源电压 (Vdss):20V(P沟道额定)
  • 连续漏极电流 (Id):9.4A
  • 导通电阻 (RDS(on)):43mΩ @ Vgs=1.8V
  • 阈值电压 (Vgs(th)):1V @ 250µA
  • 总栅极电荷 (Qg):21.5nC @ Vgs=4.5V
  • 输入电容 (Ciss):2.08nF @ 10V
  • 反向传输电容 (Crss):255pF @ 10V
  • 输出电容 (Coss):304pF
  • 最大耗散功率 (Pd):2.8W

上述参数表明该器件在低电压驱动下能实现较低的导通损耗,同时栅电荷适中,切换损耗可控,适合常见的系统电源开关场景。

三、典型应用场景

  • 电池管理与电源路径选择(高侧开关/反向阻断)
  • 便携式设备电源开关与负载切换
  • 模块化电源与PMIC外围元件
  • 低压DC-DC同步整流或保护电路(注意与同步整流拓扑匹配)

四、设计与应用建议

  • 作为 P 通道高侧开关时,利用其 1.8V 可获得较低 RDS(on),适合直接由 MCU 或低压控制信号驱动,但须注意 Vgs 极性与电平限制,避免超过器件最大栅极电压。
  • Qg=21.5nC 表示在较高频率开关时需考虑驱动能力与切换损耗;若频繁开关,建议使用适配的门极驱动器或限制开关频率。
  • DFN2x2 小封装热阻较大,建议在 PCB 上使用大焊盘与散热通孔或铜厚铺层以提升散热能力,确保耗散功率 Pd 和结温在安全范围内。
  • 注意寄生电容(Ciss、Crss)对开关过渡和 EMI 的影响,合理布局并加保护网络(RC、TVS)以提高抗干扰能力。

五、可靠性与封装注意事项

DFN2x2-6L 提供小体积解决方案,但对散热和焊接工艺敏感。推荐严格控制回流焊曲线、避免过热或潮湿吸收导致的焊接缺陷;在设计阶段进行热仿真以确认在最大工作电流下结温符合器件规格。布局时短而宽的电流回路、靠近器件的去耦与滤波,有助于降低应力与提升系统稳定性。

六、选型提醒

若系统要求更大持续电流或更低导通损耗,可考虑更低 RDS(on) 或更大封装的器件;若工作电压超出 20V 或需更高能量吸收能力,应选择相应额定更高的 MOSFET。总体而言,WPM2065A-6/TR 在低压高侧开关、便携电源管理场合具有良好的性价比与实用性。

品牌/型号:WILLSEMI WPM2065A-6/TR;封装:DFN2x2-6L。若需详细数据表或典型应用原理图,可进一步提供以便给出更针对性的设计建议。

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