WMSIC Electronic Components

WILLSEMI WNM3040-8/TR WNM3040

ModelWNM3040-8/TR
PackagePDFN3333-8L
BrandWILLSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WILLSEMI WNM3040-8 / TR
Type
WILLSEMI
Minimum package
5000

Technical parameters

Electronic Component
WILLSEMI
Electronic Component
WNM3040-8/TR
Electronic Component
1
Package
PDFN3333-8L
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.194g
Electronic Component
1
Electronic Component
BM0227559841
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
14W
Electronic Component
5000
Voltage(Vdss)
30V
Capacitor(Ciss)
540pF
Output Capacitor(Coss)
95pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

WNM3040-8/TR 产品概述

一、产品简介

WNM3040-8/TR 是 WILLSEMI(韦尔)推出的一款高可靠性 N 沟道功率场效应晶体管,封装为 PDFN3333-8L。器件额定漏源电压 Vdss 为 30V,适合低压到中低压开关应用。工作温度范围宽 (-55℃ ~ +150℃),适用于要求广泛温度稳定性的工业和汽车类电子系统。

二、主要电气参数

  • 导通电阻 RDS(on):24.5 mΩ @ Vgs = 4.5 V
  • 连续漏极电流 Id:19 A(器件热管理条件下)
  • 耗散功率 Pd:14 W(参考封装与环境条件)
  • 阈值电压 Vgs(th):2.5 V @ Id = 250 μA
  • 总栅极电荷 Qg:10.6 nC @ Vgs = 10 V
  • 输出电容 Coss:95 pF
  • 输入电容 Ciss:540 pF @ 15 V
  • 反向传输电容 Crss:68 pF @ 15 V

这些参数表明 WNM3040-8/TR 在中低压、高电流开关场景中拥有较低的导通损耗和良好的开关性能,适合在 4.5V 门极驱动或更高驱动电压下工作以降低导通损耗。

三、性能与应用场景

  • 开关电源(DC-DC 转换器)、同步整流:低 RDS(on) 在导通状态下降低能耗,提高效率;适合降压同步整流或一级开关管。
  • 电机驱动与负载开关:较高的 Id 使其可驱动较大负载电流,适合中小功率电机控制或功率分配。
  • 汽车与工业电子:耐高低温范围宽,适应车规级或严苛工业环境(需结合完整车规认证资料)。
  • 其它功率管理与负载保护电路。

四、封装与散热注意事项

PDFN3333-8L 为紧凑封装,需良好 PCB 散热设计:

  • 使用较大散热焊盘与多层铜箔连接至内部散热层;
  • 减小器件与关键走线的热阻和寄生电感;
  • 在高电流应用下考虑器件热结温度与环境温度的降额;Pd 与 Id 需按实际 PCB 条件重新计算和验证。

五、驱动与开关设计建议

  • 推荐驱动电压:4.5 V 可达到表征 RDS(on),若需更低导通损耗可采用 10 V 驱动(但 Qg 相应增加);
  • 栅极电阻:为控制 dv/dt 与振铃,建议串联合适阻值的栅极电阻并根据开关频率调整;
  • 保护措施:因数据手册中未列出能量吸收(单脉冲、雪崩)极限,建议在感性负载场合使用吸收器或 TVS 二极管限制过压。

六、使用注意与可靠性提示

  • 在高温或高频条件下需做热-电联合仿真与测试以确定热降额曲线;
  • 考虑布局以最小化漏极-源极回流环路面积,实现低 EMI;
  • 参考完整器件数据手册中的电气特性曲线和封装热阻参数,进行系统级验证。

总结:WNM3040-8/TR 以 30V 的耐压、24.5 mΩ 的低导通电阻和较高的连续电流能力,结合宽温工作范围和紧凑封装,适用于中低压高效率开关与功率管理应用。具体应用设计应结合 PCB 散热、驱动方案及系统保护策略共同优化。

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