WMSIC Electronic Components

WILLSEMI ESD56161D04-3/TR ESD56161D04

ModelESD56161D04-3/TR
PackageDFN2x2-3L
BrandWILLSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WILLSEMI ESD56161D04-3 / TR
Type
WILLSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
WILLSEMI
Electronic Component
ESD56161D04-3/TR
Electronic Component
1
Package
DFN2x2-3L
Electronic Component
Electronic Component
Type
TVS
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.042g
Electronic Component
1
Cj- Capacitor
4.2nF
Electronic Component
BM0257403651
Operating Temperature
40℃~+85℃
Voltage
14V
Electronic Component
IEC 61000-4-5;IEC 61000-4-2
Current(Ir)
8uA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ESD56161D04-3/TR 产品概述

一、产品简介

ESD56161D04-3/TR 是 WILLSEMI(韦尔)推出的一款单向瞬态电压抑制(TVS)二极管,封装为 DFN2x2-3L。器件专为对抗静电放电(ESD)和雷击浪涌(Surge)干扰而设计,适用于需要稳压保护的低电压线路,尤其是对 5V 体系的浪涌与静电防护场合。

二、主要电气参数

  • 极性:单向(正向导通时保护地线)
  • 反向截止电压 Vrwm:4.5 V(适合 5 V 轨电源的工作电压下限)
  • 击穿电压 Vbr:典型 5.7 V
  • 钳位电压 Vclamp:14 V(基于 8/20 µs 波形条件下)
  • 峰值脉冲电流 Ipp:250 A @ 8/20 µs
  • 峰值脉冲功率 Ppp:3.5 kW @ 8/20 µs
  • 反向漏电流 Ir:8 μA(在 Vrwm 条件下)
  • 结电容 Cj:4200 pF(较大)
  • 工作温度:-40 ℃ ~ +85 ℃
  • 符合防护等级:IEC 61000-4-5(浪涌),IEC 61000-4-2(静电)

三、应用建议

该器件适合用于 USB、充电口、电源轨及需要对大冲击能量进行抑制的接口保护场景,尤其是对抗雷击浪涌与强烈静电放电。由于结电容较高(4200 pF),不推荐直接用于高频高速差分信号(如高速 USB 3.0、差分高速数据总线)上,以免影响信号完整性。更适合用于电源线、低速控制信号或作为总线上级保护器件。

四、封装与布局要点

DFN2x2-3L 小型封装利于紧凑 PCB 布局。推荐实践:

  • 将 TVS 器件尽量靠近被保护的外部连接器或信号入口放置,缩短导线长度以降低寄生感抗。
  • 采用单点接地并保持到系统接地的低阻抗连接,避免在地线上形成回路。
  • 对于高能量浪涌场合,建议在 TVS 与敏感器件之间串联限流元件(电阻或共模扼流器)以分担能量。
  • 注意焊盘与回流焊工艺兼容性,遵循厂方推荐焊盘尺寸与回流曲线。

五、选型与注意事项

  • 若系统对信号带宽或微弱信号敏感,应优先考虑低电容 TVS 器件或在保护级联中采用带隔离的方案。
  • 钳位电压在大电流脉冲下可达 14 V,需确认下游器件可耐受该瞬态电压或通过限流措施降低能量传递。
  • 反向漏电流 8 μA 在低功耗系统中应纳入功耗预算。
  • 器件工作温度覆盖常见工业与消费级应用范围,但在高温或更严苛环境下应评估长期可靠性。

总结:ESD56161D04-3/TR 提供高能量吸收能力与合规的 ESD/Surge 防护,体积小巧,适用于 5V 类电源与低速信号的抗干扰保护。在布板与选型环节需重点考虑其较高的结电容与钳位特性,以确保系统信号完整性与下游器件安全。

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