WMSIC Electronic Components

WILLSEMI ESD56231L24-2/TR ESD56231L24

ModelESD56231L24-2/TR
PackageSOD-123FL
BrandWILLSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WILLSEMI ESD56231L24-2 / TR
Type
WILLSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
WILLSEMI
Electronic Component
ESD56231L24-2/TR
Electronic Component
1
Package
SOD-123FL
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.043g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
400pF
Electronic Component
BM0227584877
Operating Temperature
40℃~+85℃
Voltage
32V
Electronic Component
IEC 61000-4-4;IEC 61000-4-5;IEC 61000-4-2

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ESD56231L24-2/TR 产品概述

一、产品简介

ESD56231L24-2/TR 是 WILLSEMI(韦尔)推出的一款单路双向瞬态电压抑制器(TVS/ESD),用于抑制静电放电(ESD)和浪涌(Surge)事件对敏感电子线路的损害。器件采用 SOD-123FL 小体积封装,工作温度范围宽(-40℃ 至 +85℃),适合工业级与消费类产品的保护需求。典型参数:反向截止电压 Vrwm = 24V、击穿电压≈24.4V、钳位电压约 32V、反向漏电流 Ir ≤ 1µA、结电容 Cj ≈ 400pF,单路双向保护。

二、主要特性

  • 极性:双向(对称钳位正负极)
  • 工作电压(Vrwm):24V,适合 24V 等级信号或电源保护
  • 击穿/击穿点:约 24.4V,启动钳位动作迅速可靠
  • 钳位电压:约 32V(测试条件下),限制瞬态峰值,保护后级器件
  • 反向电流:≤ 1µA(典型,低漏电适用于高阻产品)
  • 结电容:约 400pF,适合较低到中等速率信号通道
  • 通道数:单路;封装:SOD-123FL,适合表面贴装(SMT)
  • 工作温度:-40℃~+85℃
  • 符合防护等级:IEC 61000-4-2(ESD)、IEC 61000-4-4(快速瞬变)、IEC 61000-4-5(浪涌)

三、典型应用场景

  • 通信接口与数据线保护(如串口、CAN、RS-485、部分以太网接口)
  • 电源线路或附属 24V 系统的浪涌/ESD 保护
  • 工业控制设备、仪表、楼宇自控及移动设备的输入端防护
  • USB/接口板卡的局部保护(视电压和结电容匹配情况)

四、应用指导与电路建议

  • 安装位置:尽量靠近受保护的输入/连接器端口焊盘,缩短走线以降低串联感抗与电感。
  • 连接方式:双向器件通常直接并联于被保护线与参考线之间(对差分线则并联于两线之间);对于单端 24V 系统也可并联于线对地。
  • 与限流元件配合:在需承受大能量浪涌场合,建议与串联电阻、熔断器或多层浪涌抑制器配合使用,以分担能量并改善器件寿命。
  • 对高速信号:结电容约 400pF,使用前需评估对信号完整性的影响;高频或高速差分信号可能需选用更低电容的 TVS 器件。

五、封装与可靠性

SOD-123FL 封装体积小、低剖面、适用于自动贴装和回流焊流程,适合高密度 PCB 设计。器件符合常见 IEC 抗扰度标准(ESD、快速瞬变、浪涌),可在工业环境中长期工作。建议在贴装与存储过程中遵循湿敏等级(MSL)及防静电操作规范,以保证焊接质量与长期可靠性。

六、选型与注意事项

  • 确认系统工作电压与 Vrwm 匹配(本器件 Vrwm = 24V)。
  • 评估器件钳位(Vc)在实际浪涌电流条件下是否能保护后级器件(此处钳位约 32V,随电流变化)。
  • 若需保护高速或低电容敏感线路,应选择更低 Cj 的 TVS 产品以减少对信号的影响。
  • 对于更高能量的浪涌或特殊标准要求,可考虑并联多个器件或选择能量等级更高的防护元件。

品牌与型号:WILLSEMI(韦尔) ESD56231L24-2/TR;封装:SOD-123FL。以上信息可作为电路设计、PCB 布局与可靠性评估的参考,如需更详细的电气特性曲线、典型钳位随电流曲线或封装尺寸图,请参考厂商技术资料表(Datasheet)。

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