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WILLSEMI WPM2301-3/TR WPM2301
Configuration
1 options
Configuration
24+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- WILLSEMI WPM2301-3 / TR
- Type
- WILLSEMI
- Minimum package
- 3000
Technical parameters
- Electronic Component
- WILLSEMI
- Electronic Component
- WPM2301-3/TR
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.033g
- Electronic Component
- 1
- Electronic Component
- BM0229361855
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.4W
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
- Capacitor(Ciss)
- 300pF
- Output Capacitor(Coss)
- 140pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
WPM2301-3/TR（P沟道场效应晶体管）产品概述
一、产品概述
WPM2301-3/TR 是 WILLSEMI（韦尔）推出的一款 P 沟道场效应晶体管（P‑MOSFET），采用 SOT-23 小型封装，面向便携式与电源管理场合的高侧开关与电源路径控制。器件工作温度范围宽（-55℃ 至 +150℃），适用于苛刻环境下的可靠应用。
二、主要规格
- 漏源电压（Vdss）：20 V
- 连续漏极电流（Id）：2.7 A
- 导通电阻（RDS(on)）：150 mΩ @ VGS = 2.5 V（P沟道器件注意 VGS 极性）
- 门极电荷（Qg）：4 nC @ 4.5 V
- 阈值电压（VGS(th)）：0.8 V @ 250 μA
- 输出电容（Coss）：140 pF
- 输入电容（Ciss）：300 pF @ 10 V
- 反向传输电容（Crss）：60 pF
- 功耗（Pd）：1.4 W
- 封装：SOT-23
三、主要特点
- 低门极电荷（Qg ≈ 4 nC），利于快速开关和低驱动能耗，适合电池供电系统。
- 低至 150 mΩ 的导通电阻（在典型逻辑驱动电压下），可在中小电流应用中实现较低导通损耗。
- 紧凑的 SOT-23 封装，便于空间受限的 PCB 布局与批量生产。
- 宽温度范围和较高的可靠性，适合工业与汽车电子环境（需参考具体可靠性认证）。
四、典型应用
- 电源高侧开关（负载开关）与软启动控制
- 电池管理与电源路径选择（反向电流阻断、热插拔保护）
- 移动设备与便携式终端的功率切换
- DC‑DC 转换器中的同步或辅助开关（需根据电路特性评估 P 沟道的适配性）
五、设计与使用建议
- 由于为 P 沟道器件，门源间电压极性与 N 沟道相反；确保驱动电压能将 VGS 拉到足够负值以充分导通（RDS(on) 标注在 2.5 V 驱动下）。
- 关注门极电荷与驱动能力：Qg 约 4 nC，在快速开关或并联驱动时需评估驱动器瞬时电流与功耗。建议在驱动端加入小阻抗以抑制振铃并保护驱动器。
- PCB 布局尽量缩短漏极‑源极与功率回路走线，增大散热铜箔面积以提升 Pd 实际能力并降低结温。
- 对于开关噪声敏感电路，注意 Crss（60 pF）带来的米勒效应，必要时在门极外加 RC 缓冲或施加适当阻尼。
- 在高温或高电流工作点下，按器件热阻进行功耗与温升计算，避免超过 Pd 与结温限值。
六、封装与可靠性注意事项
SOT-23 小型封装便于密集布局，但散热能力有限：对于接近额定电流或高占空比应用，建议在 PCB 上设计热铜区域并做可靠的焊接工艺控制。采购时注意型号后缀（TR 表示卷带包装），并选用正规渠道以保证器件质量与追溯性。
总结：WPM2301-3/TR 以其低导通电阻、低门电荷和小型封装，适合中低功率的高侧开关与电源管理应用。合理的门极驱动与热设计能充分发挥其性能。
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