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WILLSEMI WPM2065-6/TR WPM2065
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- WILLSEMI WPM2065-6 / TR
- Type
- WILLSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- WILLSEMI
- Electronic Component
- WPM2065-6/TR
- Electronic Component
- 1
- Package
- DFN-6L(2x2)
- Electronic Component
- 1 P
- Electronic Component
- MOSFET
- Electronic Component
- 0.036g
- Electronic Component
- 1
- Electronic Component
- BM0265642350
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.7W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
- Capacitor(Ciss)
- 2.026nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
WPM2065-6/TR 产品概述
一、产品简介
WPM2065-6/TR 是 WILLSEMI（韦尔）推出的一款 P 沟道功率场效应晶体管，封装为 DFN-6L (2×2)。该器件针对低压高效率的开关与负载保护场合优化，具有较低导通电阻和较小体积，适用于便携与板级电源设计。
二、主要规格
- 类型：P 沟道 MOSFET
- 漏源电压 Vdss：20 V
- 连续漏极电流 Id：6.9 A
- 导通电阻 RDS(on)：17 mΩ @ Vgs = 4.5 V（Id = 6.9 A）
- 耗散功率 Pd：1.7 W
- 阈值电压 Vgs(th)：450 mV
- 栅极电荷量 Qg：23 nC @ 4.5 V
- 输入电容 Ciss：2.026 nF；反向传输电容 Crss：201 pF @ 10 V
- 工作温度：-55 ℃ ～ +150 ℃
三、特性与优势
- 低 RDS(on) 提供较小导通损耗，适合高效开关与功率路径控制。
- 低 Vgs(th) 与中等栅电荷 Qg，便于由逻辑电平或驱动芯片直接驱动。
- DFN-6L (2×2) 小型封装利于高密度 PCB 布局并改善热传导路径。
- 宽温度范围适合工业级应用。
四、典型应用场景
- 电池管理与保护（PMIC、充放电开关）
- 双向/高侧/负载开关、反向电流防护
- 便携设备电源路径切换
- DC-DC 拓扑中的软开关或断路保护
五、驱动与布局建议
- 对于高侧开关建议确保栅源电压充足（靠近 4.5 V 可获得标称 RDS(on)），驱动器输出要能提供峰值电流以克服 Qg（23 nC）。
- 封装热阻限制了持续大电流条件下的散热能力，建议在 PCB 热铜区域加大散热铺铜并靠近引脚布置热通孔。
- 减少回流环路面积以降低开关噪声，Crss（201 pF）会影响开关瞬态，必要时加 RC 或栅极电阻进行阻尼。
六、热性能与可靠性
- 标称 Pd=1.7 W 在无外部散热条件下；实际应用中请根据 PCB 铜面积与环境温度计算结壳温升，确保器件结温不超限（≤150 ℃）。
- 建议在高功率工况下进行热仿真与实测，必要时并联使用或采用更大封装。
七、封装与订购信息
- 封装：DFN-6L (2×2)；适合表面贴装回流焊工艺。
- 型号：WPM2065-6/TR；品牌：WILLSEMI（韦尔）。
八、使用注意事项
- 避免长期在靠近额定 Pd 条件下运行；关注浪涌电流与热循环。
- 在高开关频率应用中注意驱动损耗与电磁干扰，必要时优化栅极驱动和布局。
概括而言，WPM2065-6/TR 以其低 RDS(on)、紧凑封装和适中驱动要求，适合多种便携与板级电源管理场景。在设计前请参考完整器件数据手册进行电气与热设计验证。
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