WMSIC Electronic Components

WILLSEMI WS72358S-8/TR WS72358S

ModelWS72358S-8/TR
PackageSOP-8
BrandWILLSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WILLSEMI WS72358S-8 / TR
Type
WILLSEMI
Minimum package
4000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
WILLSEMI
Electronic Component
WS72358S-8/TR
Electronic Component
1
Package
SOP-8
Electronic Component
Operational Amplifier
Electronic Component
0.135g
Electronic Component
1
Electronic Component
Output
Electronic Component
BM0229933488
Operating Temperature
40℃~+125℃
Amplifier
2
Output Current
46mA
(SR)
1.1V/us
Power Supply Voltage
1.8V~5.5V
Static Current(Iq)
42uA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

WS72358S-8/TR 产品概述

WS72358S-8/TR 是韦尔(WILLSEMI)推出的一款高性能双路通用运算放大器,适用于低电压、低功耗且要求较高精度的模拟前端。器件采用 SOP-8 封装,具有轨到轨输入和轨到轨输出能力,能在 1.8V 至 5.5V 单电源环境下稳定工作,并在宽温区间内保持良好的电气性能,十分适合电池供电和便携式电子产品中的传感器信号调理、滤波和缓冲等应用。

一、主要特点与性能亮点

  • 放大器数:双路(两路独立运算放大器)
  • 单电源工作电压:1.8V ~ 5.5V;最大电源宽度(Vdd-Vss):9V
  • 轨到轨输入与轨到轨输出,便于低电压下提高动态范围
  • 增益带宽积(GBP):1.5 MHz,适合低中频放大与滤波电路
  • 压摆率(SR):1.1 V/μs,响应速度适用于多数慢速信号应用
  • 输入失调电压(Vos):典型 3 mV,温漂(Vos TC):1.1 μV/°C,适用于要求稳定直流精度的系统
  • 输入偏置电流(Ib):10 pA,输入失调电流(Ios):10 pA,输入为高阻抗 CMOS/PMOS 型结构,适合传感器和高阻抗源
  • 噪声密度(eN):30 nV/√Hz @ 1 kHz,低噪声特性有利于小信号检测
  • 共模抑制比(CMRR):110 dB,差模性能优越
  • 静态电流(Iq):42 μA,低功耗,适合电池供电场景
  • 输出短路/驱动能力:可驱动至 46 mA 输出电流
  • 工作温度范围:-40°C ~ +125°C
  • 封装:SOP-8(适合表面贴装与批量生产)
  • 品牌:WILLSEMI(韦尔)

二、典型应用场景

  • 传感器信号调理:压力、温度、流量等传感器的前端放大与滤波,得益于高输入阻抗和低漂移特性
  • 低功耗便携设备:单电源 1.8V 工作能力与低静态电流,使其适用于手持仪器和移动设备
  • 精密直流测量与数据采集:较低的输入失调与温漂、良好的 CMRR 有利于 ADC 驱动和精密测量
  • 主动滤波与积分电路:1.5 MHz 的带宽可覆盖多数低频滤波需求
  • 仪表放大器前置级、缓冲放大器与电压跟随器
  • 工业控制与自动化的模拟接口

三、设计与使用建议

  • 电源去耦:为保证稳定工作与最低噪声,建议在靠近芯片的 Vcc 与 GND 引脚各并联 0.1 μF 及 10 μF 去耦电容。
  • 布局注意:输入端为高阻抗节点,应尽量缩短输入走线并避免靠近高速数字信号线;输入旁放置小值并联电容可抑制高频干扰。
  • 输出驱动:器件可提供高达 46 mA 的输出电流,但若长时间工作在高电流区会增加功耗和发热,应确保热管理和电流限制设计。
  • 频率补偿和带宽利用:GBP 为 1.5 MHz,若用于高增益应用(如 G > 100),要注意闭环带宽和相位裕度,必要时通过外部补偿元件优化稳定性。
  • 输入保护:尽管轨到轨输入能力良好,但如存在超出电源轨的输入电压或大电流干扰,应增加限流或二极管保护。

四、器件优势与限制

优势:

  • 低功耗、低偏置电流和低噪声的综合特性使其在精密、低频和便携式应用中表现优异;
  • 宽温度范围与高 CMRR 提供了工业级可靠性;
  • 轨到轨输入/输出、较强输出驱动扩展了应用灵活性。

限制:

  • GBP 1.5 MHz 及 SR 1.1 V/μs 表明该器件不适合高频或高速脉冲放大场合;
  • 在极端高电流输出或高温条件下需注意热耗散与线性度变化。

五、封装与订购信息

  • 封装:SOP-8 表面贴装
  • 型号:WS72358S-8/TR
  • 品牌:WILLSEMI(韦尔)
  • 适用于批量生产与标准 SMT 工艺,便于在常见 PCB 工业流程中使用

总结:WS72358S-8/TR 为一款定位于低功耗、高精度的双路通用运放,结合轨到轨输入/输出、低偏置电流、低噪声与宽温度范围等特性,适合传感器前端、便携式测量、精密信号调理等多类应用。在具体电路中注意去耦、布局与输出驱动限制,可发挥器件最佳性能。若需进一步的典型电路、仿真模型或更详细参数(如开环增益、输出电压摆幅在不同负载下的数值),可参考厂方数据手册或联系韦尔技术支持获取完整资料。

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