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WILLSEMI WPMD2075-6/TR WPMD2075
Configuration
1 options
Configuration
23+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- WILLSEMI WPMD2075-6 / TR
- Type
- WILLSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- WILLSEMI
- Electronic Component
- WPMD2075-6/TR
- Electronic Component
- 1
- Package
- SOT-23-6L
- Electronic Component
- 2 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.05g
- Electronic Component
- 1
- Electronic Component
- BM0227692173
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.2W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
WPMD2075-6/TR 产品概述
一、产品简介
WPMD2075-6/TR 是 WILLSEMI（韦尔）推出的双通道 P 型功率 MOSFET，额定漏源电压为 -20V，单片集成两个 P 沟道晶体管，采用 SOT-23-6L 小型封装，适合对体积与成本敏感的便携式与板载电源管理应用。器件工作温度范围宽（-55℃ 至 +150℃），适用于恶劣环境下的高可靠性设计。
二、主要参数与特性
- 类型：双通道 P 沟道 Power MOSFET
- Vdss：-20V
- 连续漏极电流 Id：3.6A（典型）
- 导通电阻 RDS(on)：100 mΩ @ VGS = -2.5V
- 栅阈电压 VGS(th)：700 mV（典型）
- 总栅极电荷 Qg：7 nC @ 10V
- 输入电容 Ciss：471 pF；输出电容 Coss：51 pF；反向传输电容 Crss：46 pF
- 功耗 Pd：1.2W（封装热限制）
- 封装：SOT-23-6L
三、性能解析
WPMD2075-6/TR 在低电压驱动（如 -2.5V 逻辑电平）下具有较低的 RDS(on)，适用于直接由 MCU/PMIC 驱动的高侧开关场合。Qg 为 7 nC，在 10V 驱动时开关损耗可控；Ciss/Coss/Crss 的组合表明器件在中等速度开关时表现平衡，既能满足负载切换响应，又不会造成过高的开关尖峰。由于 SOT-23-6L 封装的散热受限，需注意 PCB 散热设计（加大铜箔、热沉或过孔阵列）以避免超过 Pd 限值。
四、典型应用
- 高侧负载开关与电源路径控制（便携设备、模块电源）
- 电池保护与反向电流阻断（电源管理、充放电隔离）
- USB/Type-C 电源开关与分配
- 多路电源切换与负载隔离（双通道集成可节省板面）
五、封装与设计建议
SOT-23-6L 小体积利于空间受限设计，但热阻较大。建议在 PCB 布局时：为器件底脚及散热脚留足铜面积，使用多层铜平面和热过孔以改善散热；驱动端若需快速切换可并串适当栅阻以抑制振铃与过冲；设计时考虑 VGS(th) 与阈值容差，保证在最低逻辑电平下仍能获得所需导通电阻。总体上，WPMD2075-6/TR 以其双通道、高集成度和适中导通性能，适合便携电源管理与板载开关应用。
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