WMSIC Electronic Components

WILLSEMI WPM2006-6/TR WPM2006

ModelWPM2006-6/TR
PackageDFN2x2-6L
BrandWILLSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WILLSEMI WPM2006-6 / TR
Type
WILLSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
WILLSEMI
Electronic Component
WPM2006-6/TR
Electronic Component
1
Package
DFN2x2-6L
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.035g
Electronic Component
1
Electronic Component
BM0257640033
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1.45W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

WPM2006-6/TR 产品概述

产品名称

WPM2006-6/TR

产品类型

P沟道场效应管(MOSFET)

主要参数

  • 功率额定值: 1.45W
  • 漏源电压: 20V
  • 漏电流: 3A
  • 封装类型: DFN-6L (2x2mm)

生产厂商

WILLSEMI(韦尔)

产品简介

WPM2006-6/TR是一款高性能P沟道MOSFET,采用小型DFN (Dual Flat No-lead)封装,尺寸为2x2mm。该产品设计用于高效电源管理和信号控制,特别适合在工控设备、消费电子、汽车电子以及电源适配器等应用中。

特性

  1. 高效能: WPM2006-6/TR的功率额定值为1.45W,能够在高达20V的漏源电压下工作,并具备3A的漏电流能力。这使得它适合在多种电流和电压条件下工作,能有效提升电路的整体性能和可靠性。

  2. 小型化设计: DFN-6L封装(2x2mm)具备极小的占板面积,适合高度集成的电子设计,这在现代电子产品中非常重要,特别是在手机、平板电脑及智能穿戴设备等要求轻薄的产品中。

  3. 良好的热性能: 该MOSFET采用有效的散热设计,具备良好的热管理能力,能够在高负载条件下运行而不会过热。

  4. 快速开关能力: WPM2006-6/TR具有较低的开关损耗,适合高频率开关应用,能够有效提高电路的效率,降低能源消耗。

  5. 稳定性和可靠性: 产品经过严格测试,确保在不同工作条件下的稳定性,适应各种环境,能够支持长久的使用。

应用领域

WPM2006-6/TR适用于多种应用,包括但不限于:

  1. 电源管理: 在开关电源(AC-DC)或DC-DC转换器的设计中,MOSFET组件被广泛使用。它们在电源的转换、控制和管理过程中能够有效降低能量损耗,提高变换效率。

  2. 负载开关: 在电池管理系统(BMS)、电动工具以及家用电器中作为负载开关使用,能够高效控制器件的开关状态,以延长电池的使用寿命。

  3. 信号开关: 由于具有快速开关特性,WPM2006-6/TR也适用于信号控制回路,可在较高的频率下稳定工作。

  4. 汽车电子: 在现代汽车中,电子部件日益增多,对高效、可靠的开关控制需求不断攀升,该MOSFET在汽车电子系统中的应用前景广阔。

竞争优势

与传统的BJT(双极型晶体管)相比,MOSFET在开关速度、功耗和热管理方面具备明显的优势。特别是在高频和高功率应用中,MOSFET不仅能够减少热损失,而且整体电路的响应速度更快。WILLSEMI作为知名品牌,凭借其先进的生产技术和严格的质量控制,为客户提供了高质量、高性能的器件。

结论

WPM2006-6/TRP沟道MOSFET以其小型封装、卓越的电气性能和广泛的应用前景,成为现代电子设计的重要元件。无论是在消费电子、汽车电子还是工控应用中,其高效、可靠的特性都使其成为理想选择。选择WPM2006-6/TR,确保为您的项目提供最佳的性能与效益。

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