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WINSOK WSD30160DN56
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- WINSOK WSD30160DN56
- Type
- WINSOK
- Minimum package
- 5000 卷
Technical parameters
- Electronic Component
- WINSOK
- Electronic Component
- WSD30160DN56
- Electronic Component
- 1
- Package
- DFN5x6-8
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.198g
- Electronic Component
- 1
- Electronic Component
- BM0259041058
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 62.5W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 4.9nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
WSD30160DN56 产品概述
概要
WSD30160DN56 是由微硕（WINSOK）公司生产的高性能N沟道场效应管（MOSFET），适用于各种高功率电子设备和系统。以下是对这个产品的详细介绍。
基本参数
- 功率（Pd）: 62.5W
- 反向传输电容（Crss@Vds）: 530pF @ 15V
- 商品分类: 场效应管（MOSFET）
- 导通电阻（RDS(on)@Vgs, Id）: 1.9mΩ @ 10V, 120A
- 工作温度: -55℃ ~ +150℃
- 栅极电荷（Qg@Vgs）: 38nC @ 4.5V
- 漏源电压（Vdss）: 30V
- 类型: 1个N沟道
- 输入电容（Ciss@Vds）: 4.9nF @ 15V
- 连续漏极电流（Id）: 120A
- 阈值电压（Vgs(th)@Id）: 2.5V @ 250uA
封装和尺寸
WSD30160DN56 采用 DFN5x6-8 封装，尺寸为 4.9mm x 5.8mm。这一小型化的封装设计使得该器件非常适合空间有限但要求高性能的应用场景。
性能特点
低导通电阻
WSD30160DN56 具有极低的导通电阻（RDS(on)），仅为 1.9mΩ @ 10V，120A。这意味着在高电流条件下，器件的能量损耗非常小，提高了系统的整体效率和可靠性。
高连续漏极电流
该器件支持高达 120A 的连续漏极电流，这使得它非常适合高功率应用，如电源管理、电动车驱动、工业控制等领域。
宽工作温度范围
WSD30160DN56 的工作温度范围从 -55℃ 到 +150℃，这使得它能够在极端环境下保持稳定运行，满足各种苛刻的工业和汽车应用需求。
低栅极电荷
栅极电荷（Qg）为 38nC @ 4.5V，这降低了开关时间和能量损耗，提高了系统的开关频率和效率。
低输入电容
输入电容（Ciss）为 4.9nF @ 15V，这有助于减少驱动电路的负载，简化驱动设计，并提高系统的稳定性。
应用场景
电源管理
WSD30160DN56 适用于各种高功率电源管理系统，包括直流-直流转换器、开关模式电源（SMPS）等。其低导通电阻和高连续漏极电流使得它在这些应用中表现出色。
电动车驱动
在电动车驱动系统中，WSD30160DN56 可以作为主驱动器件，提供高效能和可靠性的电力传输。
工业控制
该器件也广泛应用于工业控制领域，如变频器、伺服驱动器等， 其高性能和耐用性使得它成为这些系统的理想选择。
汽车电子
由于其宽工作温度范围和高可靠性，WSD30160DN56 还被广泛用于汽车电子系统，如启动器、发电机调节器等。
设计考虑
驱动电路设计
由于 WSD30160DN56 的低栅极电荷和低输入电容，驱动电路设计变得更加简单。开发人员可以选择较小的驱动器件来实现快速开关和低能量损耗。
热管理
尽管该器件具有高功率处理能力，但在实际应用中仍需要仔细考虑热管理问题。通过适当的散热设计，可以确保器件在高负载条件下保持稳定运行。
EMC 设计
在高频开关应用中，EMC（电磁兼容性）设计是非常重要的。开发人员需要确保系统的布局和设计能够最小化电磁干扰，从而保证系统的稳定性和可靠性。
总结
WSD30160DN56 是一款高性能、低导通电阻的N沟道场效应管，适用于各种高功率电子设备和系统。其优异的参数和小型化封装使得它成为许多应用领域的首选器件。通过合理的设计和应用，这款器件可以帮助开发人员创建高效、可靠且高性能的电子系统。
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