WMSIC Electronic Components

WINSOK WSD3050DN33

ModelWSD3050DN33
PackageDFN-8(3x3)
BrandWINSOK
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WINSOK WSD3050DN33
Type
WINSOK
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
WINSOK
Electronic Component
WSD3050DN33
Electronic Component
1
Package
DFN-8(3x3)
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.133g
Electronic Component
1
Electronic Component
BM0264549099
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
26W
Electronic Component
Electronic Component
Electronic Component
5000
Voltage(Vdss)
30V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

WSD3050DN33 产品概述

一、主要特性

WSD3050DN33 是微硕(WINSOK)推出的一款高性能沟槽型 N 沟道 MOSFET,针对同步降压转换器和高密度电源管理场景优化设计。器件具有极低导通电阻与合理的栅极电荷折衷,适合高效率、快速开关的应用。符合 RoHS 绿色环保要求,100% 经过电子装配(EAs)测试并通过完整功能可靠性认证。

二、关键参数

  • 类型:N 沟道 MOSFET(单颗)
  • 漏源耐压 Vdss:30 V
  • 连续漏极电流 Id:50 A
  • 导通电阻 RDS(on):11 mΩ @ Vgs=4.5 V
  • 阈值电压 Vgs(th):2.5 V
  • 总栅极电荷 Qg:12 nC @ 10 V
  • 输入电容 Ciss:1.4 nF
  • 输出电容 Coss:220 pF
  • 反向传输电容 Crss:140 pF
  • 功耗 Pd:26 W
  • 工作温度范围:-55 ℃ ~ +150 ℃
  • 品牌:WINSOK(微硕)
  • 封装:DFN-8 (3×3 mm)

三、适用场景

  • 同步整流降压转换器(Synchronous Buck)功率开关
  • 服务器与通信电源的主开关器件
  • 多相 VRM 与点对点电源模块
  • 电机驱动、USB PD、快充电源和电池管理系统(BMS)
  • 高密度开关电源及便携式电源方案

四、封装与热管理

DFN-8 (3×3) 小型封装适合高密度 PCB 布局,单元密度高,有利于降低封装占位。为获得最佳热性能,建议:

  • 在 PCB 熔铜区下方布置大面积散热铜箔并配合多盏热通孔(thermal vias)导通至内层或底层散热铜
  • 保持焊盘设计与厂商推荐封装脚位一致,减少寄生电感与热阻
  • 在高纹波或高电流应用中注意器件结温变化,必要时采用散热器或强制风冷

五、设计建议与可靠性

  • 栅极驱动:器件在 Vgs=4.5 V 下已具有低 RDS(on),但若追求更低导通损耗,可采用 10–12 V 门极驱动以充分增强。
  • 开关损耗:Qg=12 nC 的栅极电荷有利于在中高频切换下保持较低驱动能耗,Crss=140 pF 有助于预测开关转态能量和回灌行为。
  • PCB 布局:靠近 MOSFET 的电感回路应尽量短,输入输出电容尽量靠近器件引脚,减少回路面积以降低 EMI 与开关振铃。
  • 可靠性与测试:器件通过 100% EAs 测试并具备完整可靠性认证,适合批量生产与长期可靠工作。

总体而言,WSD3050DN33 以其低 RDS(on)、适中栅极电荷和紧凑 DFN-8 封装,能在高效同步降压和高密度电源设计中提供良好的性能与可靠性。根据具体应用,应权衡导通损耗与开关损耗,并在 PCB 设计与散热上做好布局优化。

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