WMSIC Electronic Components

WINSOK WSD30L20DN33

ModelWSD30L20DN33
PackageDFN-8(3x3.1)
BrandWINSOK
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WINSOK WSD30L20DN33
Type
WINSOK
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
WINSOK
Electronic Component
WSD30L20DN33
Electronic Component
1
Package
DFN-8(3x3.1)
Electronic Component
1 P
Electronic Component
MOSFET
Electronic Component
0.053g
Electronic Component
1
Electronic Component
BM0257369457
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
16.6W
Electronic Component
Electronic Component
Electronic Component
5000
Voltage(Vdss)
30V
Capacitor(Ciss)
900pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

WSD30L20DN33 产品概述

一、产品简介

WSD30L20DN33 是微硕(WINSOK)推出的一款高性能 P 沟道功率 MOSFET,额定漏源电压 VDS 为 -30V,适用于中低电压电源管理和高侧开关场合。器件采用 DFN-8(3.0 × 3.1 mm)小外形封装,兼顾散热与面积效率,适合空间受限且要求高电流的电源应用。

二、主要电气参数

  • 类型:单片 P 沟道 MOSFET
  • VDS:-30 V
  • 持续漏极电流 |ID|:20 A(最大)
  • RDS(on):25 mΩ @ VGS = -10 V(典型);约 30.5 mΩ @ VGS ≈ -4.18 V
  • 栅阈电压 VGS(th):≈ -1.7 V(典型)
  • 栅极总电荷 Qg:19 nC @ VGS = 4.5 V(参考)
  • Qgs:6.3 nC, Qgd:4.5 nC
  • 输入电容 Ciss:900 pF;输出电容 Coss:140 pF;反向传输电容 Crss:120 pF
  • 功耗 Pd:16.6 W(器件额定耗散)
  • 工作温度:-55 ℃ ~ +150 ℃

三、典型特性与优势

  • 低导通电阻:在充分驱动(VGS = -10 V)条件下 RDS(on) 仅 25 mΩ,适合需要低压降与高效率的场合。
  • 合理的栅极电荷(Qg = 19 nC)在功率开关速度与驱动损耗之间取得平衡,便于驱动电路设计。
  • 中等电容值(Ciss/Coss/Crss)有助于在开关过程中控制电磁干扰和振铃。
  • DFN-8 小封装兼具热性能与 PCB 布局灵活性,适用于紧凑型功率模块。

四、典型应用场景

  • 作为高侧开关或反相保护开关用于 12V/24V 系统的电源管理
  • 电池管理、负载断开与电流切换控制
  • DC-DC 转换器中的同步开关与反馈回路
  • 工业与通信设备中的功率开关与保护电路

五、设计与使用建议

  • 作为 P 沟道高侧开关时,注意栅极驱动需保证 VGS 范围在器件允许值内(避免过压)。典型驱动策略为将栅极拉至与源极相同电位关闭,拉低一定电压(如拉至地)以开启。
  • 推荐在栅极串联合适阻值以抑制瞬态电流与振铃,并在感性负载侧配置续流二极管或 RC 抑制网络。
  • 注意器件功耗与 PCB 热设计:在高电流工作场合应优化散热铜箔与热 vias,确保结温在安全范围内以发挥额定 Pd。
  • 在并联使用或替换器件时,注意 RDS(on)、门极电荷与热阻匹配,避免不均流。

六、封装与可靠性

DFN-8(3 × 3.1 mm)封装提供良好的热路径与机械可靠性,适合贴片自动化生产。器件工作温度覆盖工业级范围(-55 ℃ 至 +150 ℃),适应严苛环境应用。若需更详细的绝对最大额定值、开关特性曲线和典型应用电路,请参考微硕 WSD30L20DN33 的完整数据手册。

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