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WINSOK WSD46N10DN56
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- WINSOK WSD46N10DN56
- Type
- WINSOK
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- WINSOK
- Electronic Component
- WSD46N10DN56
- Electronic Component
- 1
- Package
- DFN-8-C-EP2(5x6)
- Electronic Component
- 2 N
- Electronic Component
- MOSFET
- Electronic Component
- Electronic Component
- Electronic Component
- 0.12g
- Electronic Component
- 1
- Electronic Component
- BM0264549094
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 71W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 100V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
WSD46N10DN56 产品概述
一、产品概览
WSD46N10DN56 是 WINSOK（微硕）推出的双路 N 沟道场效应管，封装为 DFN-8-C-EP2（5×6）。器件为共源配置，适用于对开关速度、导通损耗和封装密度有较高要求的中高压功率应用。器件在合理散热条件下，单芯片可承受较大的连续电流与耗散功率，适合同步整流、DC-DC 变换和功率开关场景。
二、主要电气参数
- 漏-源电压（Vdss）：100 V
- 连续漏极电流（Id）：40 A（视封装散热情况）
- 导通电阻（RDS(on)）：14 mΩ @ Vgs = 10 V
- 耗散功率（Pd）：71 W（理想散热条件下）
- 阈值电压（Vgs(th)）：1.2 V（典型）
- 栅极总电荷（Qg）：17 nC @ Vgs = 10 V
- 输入电容（Ciss）：1.01 nF
- 反向传输电容（Crss）：12 pF
- 工作温度范围：-55 ℃ ~ +150 ℃
- 数量：2 个 N 沟道 MOSFET（集成在同一封装）
三、封装与热管理
DFN-8-C-EP2（5×6）小型化封装带有中间散热外露焊盘（EP），利于将热量传导到 PCB。器件标称 71 W 功耗依赖于 PCB 散热设计：建议在焊盘下添加足够的热传导铜箔与过孔（thermal vias），并扩大散热区域或使用多层铜层连接，以降低结壳温升并保证长期可靠性。
四、典型应用
- 同步整流器与高频 DC-DC 转换器
- 电机驱动中的低侧/高侧开关（根据驱动方式）
- 负载开关与电源管理模块
- 开关电源、逆变器、小型充电器与电机控制器
五、设计与使用建议
- 驱动电压：为达到标称 RDS(on)，建议采用 Vgs ≈ 10 V 的驱动电压；若采用逻辑电平驱动需评估 RDS(on) 上升带来的额外损耗。
- 栅极驱动：Qg = 17 nC，驱动器需有足够电流能力，考虑加入 5–20 Ω 的栅极电阻以限制峰值电流和振铃。
- 开关损耗与 EMI：Ciss 较大，开关中存在能量损耗与 dv/dt，必要时配合缓冲、电阻或阻尼网络以控制过冲和 EMI。
- 并联使用：可并联以降低等效 RDS(on)，但需注意良好匹配与均流措施（共同源阻抗、对称布局）。
六、常见注意事项
- 标注的 Pd 与 Id 均依赖 PCB 散热能力，实际使用时应通过热仿真或实测验证结温。
- Vgs 超过最大额定值会损坏栅极，设计时预留栅极抑制方案（TVS 或钳位电路）。
- 在高频开关下注意 Crss（米勒电容）影响，可能导致关断时的额外能量耗散。
七、总结
WSD46N10DN56 以其 100 V 等级、低 RDS(on)（14 mΩ @10 V）与双 MOSFET 集成优势，适合紧凑型高效率功率设计。合理的驱动、布局与散热措施是发挥其性能和保证可靠性的关键。若需替代或并联方案，可根据 RDS(on)、Qg 与封装热阻进行匹配比较。
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