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WINSOK WSP4984
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- WINSOK WSP4984
- Type
- WINSOK
- Minimum package
- 3000
Technical parameters
- Electronic Component
- WINSOK
- Electronic Component
- WSP4984
- Electronic Component
- 1
- Package
- SOP-8_150mil
- Electronic Component
- 2 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.209g
- Electronic Component
- 1
- Electronic Component
- BM0226887924
- Operating Temperature
- 55℃~+150℃
- Electronic Component
- 3000
- Voltage(Vdss)
- 40V
- Capacitor(Ciss)
- 1.95nF
- Output Capacitor(Coss)
- 250pF
- Gate (Qg)
- [email protected]
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
WSP4984 产品概述
一、产品简介
WSP4984 是 WINSOK（微硕）推出的双通道 N 沟道功率 MOSFET，集成两颗性能均衡的 N 沟道晶体管于 SOP-8 150mil 封装。器件针对中低压、大电流开关应用优化，额定漏源电压 40V，连续漏极电流可达 10A，适合同步降压、负载开关和电机驱动等场景。
二、主要参数
- 类型：2 个 N 沟道 MOSFET（双通道）
- 漏源电压 Vdss：40V
- 连续漏极电流 Id：10A
- 导通电阻 RDS(on)：21 mΩ @ Vgs = 4.5V（在 5.9A 条件下）
- 栅极阈值电压 Vgs(th)：2.7V @ 250 μA
- 总栅极电荷 Qg：16 nC @ 4.5V
- 输入电容 Ciss：1.95 nF
- 输出电容 Coss：250 pF
- 反向传输电容 Crss：135 pF
- 工作温度范围：-55℃ ～ +150℃
- 封装：SOP-8_150mil
- 品牌：WINSOK（微硕）
三、关键特性
- 低导通电阻：21 mΩ 的 RDS(on) 在中低压下可有效减少导通损耗，适合高效率要求的功率路径。
- 中等栅极电荷：16 nC 的 Qg 在 4.5V 驱动下保持较小开关损耗，利于用常见驱动器或 MCU 直接驱动。
- 快速开关性能：Coss 与 Crss 值适中，兼顾开关速度与 EMI 控制，利于开关电源与 PWM 驱动设计。
- 宽温度范围：-55℃ 至 +150℃ 的工作温度提升了可靠性与适用环境。
四、典型应用
- 同步整流/降压转换器（DC-DC）
- 电源管理开关与负载断开保护
- 驱动小功率直流电机与伺服系统
- 电池保护与充放电控制
- 通用功率开关模块
五、封装与热管理
SOP-8 150mil 封装有利于节省 PCB 面积，但比散热片式封装导热能力有限。实际设计中建议：
- 为功率引脚设计较宽的铜箔，增加铺铜面积并使用过孔连接到多层散热层。
- 在高电流工况下评估结-膛温升，必要时采取底层大铜皮或散热体辅助散热。
六、设计与使用建议
- 栅极驱动：推荐使用 4.5V 以上的可靠驱动电压以获得标称 RDS(on)。若驱动电压受限，请验证在低 Vgs 下的导通损耗。
- 开关布局：注意减小栅、漏、源回路环路面积，增加去耦电容以降低 EMI。
- 并联使用：可并联以降低热应力和等效 RDS(on)，并注意器件匹配与均流机制。
- 验证试验：在目标负载、频率和温度条件下做热仿真与实测验证，确认稳定工作点。
七、可靠性与选购建议
WSP4984 适合追求面积效率与中等功率密度的系统。选型时注意匹配最大电流、散热预算及开关频率要求；对关键应用建议获取样片进行功耗、热阻与寿命测试。若需更低 RDS(on) 或更强散热能力，可考虑更大封装或专用功率封装的替代品。
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