WMSIC Electronic Components

WINSOK WSF4012

ModelWSF4012
PackageTO-252-4
BrandWINSOK
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WINSOK WSF4012
Type
WINSOK
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
WINSOK
Electronic Component
WSF4012
Electronic Component
1
Package
TO-252-4
Electronic Component
1 N +1 P
Type
N +P
Electronic Component
MOSFET
Electronic Component
0.479g
Electronic Component
1
Electronic Component
BM0264549083
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
25W;31.3W
Electronic Component
Electronic Component
Electronic Component
2500
Voltage(Vdss)
40V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

WSF4012 复合场效应管(MOSFET)产品概述

WSF4012是WINSOK(微硕)推出的一款N沟道+P沟道复合MOSFET,采用TO-252-4(4脚DPAK)表面贴装封装,集成1个N沟道和1个P沟道于单封装内,兼顾高集成度与性能表现,适用于中小功率电源管理、电机驱动等场景。

一、产品基本信息

  • 品牌:WINSOK(微硕)
  • 类型:N沟道+P沟道复合MOSFET
  • 封装:TO-252-4(表面贴装,4引脚)
  • 核心组成:单封装集成1个N沟道MOSFET + 1个P沟道MOSFET,无需额外焊接分立器件

二、核心电气参数

WSF4012的N、P沟道分别具备针对性的电流与功率能力,关键参数如下:

参数项 N沟道规格 P沟道规格 通用规格 漏源电压(Vdss) 40V(安全工作上限) 40V(安全工作上限) - 连续漏极电流(Id) 30A(持续导通最大电流) 20A(持续导通最大电流) - 导通电阻(RDS(on)) 16mΩ@Vgs=10V、Id=12A (匹配应用场景的导通损耗) - 耗散功率(Pd) 25W(最大允许功耗) 31.3W(最大允许功耗) - 阈值电压(Vgs(th)) - - 2V@Id=250uA(开启电压) 栅极电荷量(Qg) - - 5.5nC@Vgs=4.5V(开关损耗关键) 输入电容(Ciss) - - 593pF@Vgs=15V(开关速度相关) 反向传输电容(Crss) - - 56pF@Vgs=15V(米勒效应关键) 输出电容(Coss) 108pF 76pF - 工作结温范围(Tj) - - -55℃~+150℃(宽温适应)

三、关键性能特点

  1. 低导通损耗:N沟道导通电阻仅16mΩ(Vgs=10V、Id=12A),P沟道功耗达31.3W,导通时热损耗小,系统效率提升明显;
  2. 快速开关特性:栅极电荷量(Qg)仅5.5nC(Vgs=4.5V),配合低输入/反向传输电容,开关速度快,适合高频应用场景;
  3. 集成度优势:单封装集成N+P沟道,可直接替代半桥电路中的分立器件,简化PCB设计,节省空间与成本;
  4. 宽温可靠性:工作结温覆盖-55℃至+150℃,满足工业级、车载等恶劣环境下的长期稳定工作;
  5. 低阈值驱动:阈值电压(Vgs(th))为2V(Id=250uA),适配低电压驱动电路(如3.3V/5V系统),兼容性更强。

四、典型应用场景

WSF4012的复合结构与性能参数,使其广泛适用于以下场景:

  • DC-DC转换器:同步降压/升压电路(如便携设备电源、车载辅助电源);
  • 电源管理模块:笔记本电脑、平板电脑等移动设备的电源控制;
  • 电机驱动:小型直流电机、步进电机的驱动电路(如智能家居设备、小型机器人);
  • 负载开关:电源切换、过流保护电路;
  • 电池保护:锂电池组的充放电控制与短路保护。

五、封装与可靠性

WSF4012采用TO-252-4封装,具备以下优势:

  • 表面贴装设计:适合自动化生产,焊接效率高,降低人工成本;
  • 散热性能:封装结构利于热量散发,配合宽结温范围,减少热失效风险;
  • 行业兼容:引脚布局符合通用规范,可直接替换同类复合MOSFET,无需修改电路。

综上,WSF4012以高集成度、低损耗、快速开关为核心优势,适配多场景中小功率应用,是电源设计、电机驱动领域的实用选择。

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